SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 109, Issue , 2015, Pages 8-11

Effects of dielectric material properties on graphene transistor performance

(5) Jang, Sung Kyu a Jeon, Jaeho a Jeon, Su Min a Song, Young Jae a,b Lee, Sungjoo a,b

a Sungkyunkwan University (South Korea)

b Sungkyunkwan University (South Korea)

Author keywords

Gate dielectric; Graphene field effect transistor

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CARRIER MOBILITY; CHARGE TRAPPING; GATE DIELECTRICS; GATES (TRANSISTOR); GRAPHENE; GRAPHENE TRANSISTORS; HYSTERESIS; III-V SEMICONDUCTORS; NITROGEN COMPOUNDS; SILICA; TRANSISTORS;

CARRIER TRANSPORT CHARACTERISTICS; DIELECTRIC SUBSTRATES; DIRAC POINT SHIFTS; ELECTRICAL PERFORMANCE; GRAPHENE FIELD-EFFECT TRANSISTORS; HEXAGONAL BORON NITRIDE; SURFACE OPTICAL PHONONS; TRANSISTOR PERFORMANCE;

DIELECTRIC MATERIALS;

EID: 84925325485 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/j.sse.2015.03.003 Document Type: Article

Times cited : (23)

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