Top oxide thickness dependence of remote phonon and charged impurity scattering in top-gated graphene

Applied Physics Letters

Volumn 102, Issue 18, 2013, Pages

  Ong, Zhun Yong ^a   Fischetti, Massimo V ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED IMPURITY; CHARGED IMPURITY SCATTERINGS; DIELECTRIC SCREENING; GATE INSULATOR; OXIDE THICKNESS; SINGLE LAYER; TOP GATE;

BORON NITRIDE; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HAFNIUM OXIDES; IMPURITIES; PHONONS;

GRAPHENE;

EID: 84877789158     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804432     Document Type: Article

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