Rare earth doped metal-oxide-semiconductor structures: A promising material system or a dead end of optoelectronic evolution?

ECS Transactions

Volumn 61, Issue 5, 2014, Pages 175-185

  Rebohle, L ^a   Berencen Y ^b   Braun, M ^a   Garrido, B ^b   Hiller, D ^c   Liu, B ^d   Ramirez J M ^b   Sun, J M ^d   Wutzler, R ^a   Helm, M ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF BARCELONA   (Spain)

^c UNIVERSITY OF FREIBURG   (Germany)

^d NANKAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ERBIUM; METALLIC COMPOUNDS; MOS DEVICES; RARE EARTHS; SEMICONDUCTOR JUNCTIONS; TRANSISTORS;

ELECTROLUMINESCENCE PROPERTIES; INJECTION CURRENT DENSITY; LINEAR DEPENDENCE; MATERIAL SYSTEMS; METAL OXIDE SEMICONDUCTOR STRUCTURE; OPTIMUM CONDITIONS; OPTOELECTRONIC APPLICATIONS; UNCERTAINTY FACTORS;

ELECTROLUMINESCENCE;

EID: 84925167840     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/06105.0175ecst     Document Type: Conference Paper

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