Luminescence from Er and Tb implanted into MOS tunnel diodes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 481-485

  Wang, S ^a   Amekura, H ^a   Eckau, A ^a   Carius, R ^a   Buchal, Ch ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Electroluminescence; Erbium; Photoluminescence; SiO2; Terbium

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; ELECTRON TUNNELING; ERBIUM; ION IMPLANTATION; MOS DEVICES; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SILICA; TERBIUM;

FORWARD BIAS;

TUNNEL DIODES;

EID: 0033513911     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00748-4     Document Type: Article

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