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Volumn 97, Issue 8, 2010, Pages

Electroluminescence from Er-doped Si-rich silicon nitride light emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL DEVICES; ELECTRICAL PUMPING; ELECTRICAL TRANSPORT MECHANISMS; ER-DOPED; EXCITATION CROSS SECTION; LOW INJECTION VOLTAGE; NEAR INFRARED; REACTIVE CO-SPUTTERING; ROOM TEMPERATURE; SI TECHNOLOGY; SPECTRAL RANGE;

EID: 77956193466     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3483771     Document Type: Article
Times cited : (92)

References (23)
  • 8
  • 9
    • 68249086854 scopus 로고    scopus 로고
    • APPLAB 0003-6951. 10.1063/1.3186062
    • R. Li, S. Yerci, and L. Dal Negro, Appl. Phys. Lett. APPLAB 0003-6951 95, 041111 (2009). 10.1063/1.3186062
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 041111
    • Li, R.1    Yerci, S.2    Dal Negro, L.3
  • 18
    • 79956018651 scopus 로고    scopus 로고
    • Correlation of charge transport to local atomic strain in Si-rich silicon nitride thin films
    • DOI 10.1063/1.1433167
    • S. Habermehl and C. Carmignani, Appl. Phys. Lett. APPLAB 0003-6951 80, 261 (2002). 10.1063/1.1433167 (Pubitemid 34104595)
    • (2002) Applied Physics Letters , vol.80 , Issue.2 , pp. 261
    • Habermehl, S.1    Carmignani, C.2
  • 19
    • 77956221682 scopus 로고    scopus 로고
    • We believe that one reason for the higher turn-on voltage for 980 nm peak is the lower quantum efficiency of the detector and the experimental system at 980 nm.
    • We believe that one reason for the higher turn-on voltage for 980 nm peak is the lower quantum efficiency of the detector and the experimental system at 980 nm.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.