Electroluminescence properties of SiOx layers implanted with rare earth ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 216, Issue 1-4, 2004, Pages 222-227

  Irrera, A ^a   Miritello, M ^a   Pacifici, D ^a   Franzo G ^a   Priolo, F ^a   Iacona, F ^b   Sanfilippo, D ^c   Di Stefano, G ^c   Fallica, P G ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b CNR IMM   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

Electroluminescence; Optoelectronic devices; Rare earth; Si nanocrystals

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC EXCITATION; ELECTROLUMINESCENCE; LIGHT EMISSION; OPTOELECTRONIC DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SILICA; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

RARE EARTH; SI NANOCRYSTALS;

ION IMPLANTATION;

EID: 1042288897     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.038     Document Type: Conference Paper

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