Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

Applied Physics Letters

Volumn 103, Issue 11, 2013, Pages

  Berencen Y ^a   Wutzler, R ^b   Rebohle, L ^b   Hiller, D ^c   Ramirez J M ^a   Rodriguez J A ^d   Skorupa, W ^b   Garrido, B ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c UNIVERSITY OF FREIBURG   (Germany)

^d UNIVERSITY OF HAVANA   (Cuba)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE MECHANISMS; EXCITATION CROSS SECTION; EXTERNAL QUANTUM EFFICIENCY; HIGH OPTICAL POWER DENSITY; INTEGRATED LIGHT SOURCE; LIGHT EMITTING DEVICES; POPULATION INVERSIONS; SILICON-RICH SILICON NITRIDES;

ELECTROLUMINESCENCE; LIGHT EMISSION; LIGHT SOURCES; SILICON; SILICON NITRIDE;

SILICON OXIDES;

EID: 84884255921     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4820836     Document Type: Article

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