The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices

Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

  Nazarov, A N ^a   Tiagulskyi, S I ^a   Tyagulskyy, I P ^a   Lysenko, V S ^a   Rebohle, L ^b   Lehmann, J ^b   Prucnal, S ^b,c   Voelskow, M ^b   Skorupa, W ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c MARIA CURIE SK ODOWSKA UNIVERSITY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPTURE CROSS SECTIONS; CHARGED DEFECTS; CLUSTER SIZES; CONCENTRATION OF; COULOMB REPULSIONS; DIELECTRIC MEDIA; ENHANCED SCATTERING; EXCITATION CROSS SECTION; FURNACE ANNEALING; LIGHT EMITTING DEVICES; MATRIX; METAL OXIDE SEMICONDUCTOR; OXYGEN DEFICIENCY; POSITIVE CHARGES; QUENCHING PROCESS; SHELL MODELS; SMALL SIZE; TUNNELING DISTANCE;

CHARGE TRAPPING; DANGLING BONDS; EUROPIUM; HOT ELECTRONS; NANOCLUSTERS; OXYGEN; QUENCHING; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TERBIUM ALLOYS;

ELECTROLUMINESCENCE;

EID: 77954212257     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3436591     Document Type: Article

References (49)

1. M. E. Castagna, S. Coffa, M. Monaco, L. Caristia, A. Messina, R. Mangano, and C. Bongiorno, Physica E (Amsterdam) PELNFM 1386-9477 16, 547 (2003). 10.1016/S1386-9477(02)00644-6
2. A. Irrera, M. Miritello, D. Pacifici, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 216, 222 (2004). 10.1016/j.nimb.2003.11.038
3. S. Wang, S. Coffa, R. Carius, and Ch. Buchal, Mater. Sci. Eng., B MSBTEK 0921-5107 81, 102 (2001). 10.1016/S0921-5107(00)00668-1 (Pubitemid 32288081)
4. C. Bŕchignac, Ph. Cahuzac, F. Carlier, and J. Ph. Roux, Z. Phys. D: At., Mol. Clusters ZDACE2 0178-7683 28, 67 (1993). 10.1007/BF01437456
5. J. M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, J. Appl. Phys. JAPIAU 0021-8979 97, 123513 (2005). 10.1063/1.1935766 (Pubitemid 40925301)
6. S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, Appl. Phys. Lett. APPLAB 0003-6951 90, 181121 (2007). 10.1063/1.2735285 (Pubitemid 46701119)
7. J. M. Sun, S. Pruchnal, W. Skorupa, T. Dekorsy, A. Muchlich, M. Helm, L. Rebohle, and T. Gebel, J. Appl. Phys. JAPIAU 0021-8979 99, 103102 (2006). 10.1063/1.2197247 (Pubitemid 43838514)
8. P. Solomon, J. Appl. Phys. JAPIAU 0021-8979 48, 3843 (1977). 10.1063/1.324253 (Pubitemid 8550840)
9. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
10. A. Nazarov, T. Gebel, L. Rebohle, W. Skorupa, I. Osiyuk, and V. Lysenko, J. Appl. Phys. JAPIAU 0021-8979 94, 4440 (2003). 10.1063/1.1604934
11. M. Nagamori, J. -A. Boivin, and A. Claveau, J. Non-Cryst. Solids JNCSBJ 0022-3093 189, 270 (1995). 10.1016/0022-3093(95)00239-1
12. L. R. Morss and R. J. M. Konings, in Binary Rare Earth Oxides, edited by, G. Adachi, N. Imanaka, and, Z. C. Kang, (Kluwer Academic, Dordrecht, Boston, London, 2004), p. 163.
13. L. Rebohle, J. Lehmann, S. Prucnal, A. Nazarov, I. Tyagulskii, S. Tyagulskii, A. Kanjilal, M. Voelskow, D. Grambole, W. Skorupa, and M. Helm, J. Appl. Phys. JAPIAU 0021-8979 106, 123103 (2009). 10.1063/1.3272781
14. H. Amekura, A. Eckau, R. Carius, and Ch. Buchal, J. Appl. Phys. JAPIAU 0021-8979 84, 3867 (1998). 10.1063/1.368591
15. G. H. Dieke, Spectra and Energy Levels of Rare Earth Ions in Crystals (Interscience, New York, 1968).
16. S. A. Studenikin and M. Cocivera, Thin Solid Films THSFAP 0040-6090 394, 264 (2001). 10.1016/S0040-6090(01)01153-1
17. H. Nishikawa, E. Watanabe, D. Ito, Y. Sakurai, K. Nagasawa, and Y. Ohki, J. Appl. Phys. JAPIAU 0021-8979 80, 3513 (1996). 10.1063/1.363223
18. S. Tyagulskiy, I. Tyagulskyy, A. Nazarov, V. Lysenko, L. Rebohle, J. Lehmann, and W. Skorupa, Microelectron. Eng. MIENEF 0167-9317 86, 1954 (2009). 10.1016/j.mee.2009.03.034
19. R. Tohmon, Y. Shimogaichi, H. Mizuno, Y. Okhi, K. Nagasawa, and Y. Hama, Phys. Rev. Lett. PRLTAO 0031-9007 62, 1388 (1989). 10.1103/PhysRevLett.62.1388
20. S. Prucnal, J. M. Sun, A. Nazarov, I. P. Tyagulskii, I. N. Osiyuk, R. Fedaruk, and W. Skorupa, Appl. Phys. B APDOEM 0946-2171 88, 241 (2007). 10.1007/s00340-007-2700-0 (Pubitemid 47130451)
21. A. J. Kenyon, Semicond. Sci. Technol. SSTEET 0268-1242 20, R65 (2005). 10.1088/0268-1242/20/12/R02 (Pubitemid 41662325)
22. R. N. Litovskii, V. S. Lysenko, A. N. Nazarov, T. E. Rudenko, S. B. Kaschieva, and N. R. Nedev, Phys. Status Solidi A PSSABA 0031-8965 77, 699 (1983). 10.1002/pssa.2210770236
23. C. T. Sah, J. Y.-C. Sun, and J. J.-T. Tzou, J. Appl. Phys. JAPIAU 0021-8979 55, 1525 (1984). 10.1063/1.333411 (Pubitemid 14588868)
24. C. C. H. Hsu, S. C. S. Pan, and C. -T. Sah, J. Appl. Phys. JAPIAU 0021-8979 58, 1326 (1985). 10.1063/1.336101
25. M. V. Fischetti, J. Appl. Phys. JAPIAU 0021-8979 57, 2860 (1985). 10.1063/1.335223
26. Y. Nissan-Cohen, J. Shappir, and D. Frohman-Bentchkowsky, J. Appl. Phys. JAPIAU 0021-8979 60, 2024 (1986). 10.1063/1.337204
27. D. J. DiMaria and J. W. Stasiak, J. Appl. Phys. JAPIAU 0021-8979 65, 2342 (1989). 10.1063/1.342824
28. L. P. Trombetta, F. J. Feigl, and R. J. Zeto, J. Appl. Phys. JAPIAU 0021-8979 69, 2512 (1991). 10.1063/1.348689
29. S. E. Thompson and T. Nishida, J. Appl. Phys. JAPIAU 0021-8979 72, 4683 (1992). 10.1063/1.352074
30. D. J. DiMaria, E. Cartier, and D. A. Buchanan, J. Appl. Phys. JAPIAU 0021-8979 80, 304 (1996). 10.1063/1.362821
31. F. J. Feigl, D. R. Young, D. J. DiMaria, S. Lai, and J. Calise, J. Appl. Phys. JAPIAU 0021-8979 52, 5665 (1981). 10.1063/1.329502 (Pubitemid 12439821)
32. D. Vuillaume and A. Bravaix, J. Appl. Phys. JAPIAU 0021-8979 73, 2559 (1993). 10.1063/1.353065
33. V. A. Gritsenko, A. V. Shaposhnikov, Yu. N. Novikov, A. P. Baraban, H. Wong, G. M. Zhidomirov, and M. Roger, Microelectron. Reliab. MCRLAS 0026-2714 43, 665 (2003). 10.1016/S0026-2714(03)00030-1
34. P. Balk, M. Aslam, and D. R. Young, Solid-State Electron. SSELA5 0038-1101 27, 709 (1984). 10.1016/0038-1101(84)90019-4
35. E. H. Nicollian, C. N. Berglund, P. F. Schmidt, and J. M. Andrews, J. Appl. Phys. JAPIAU 0021-8979 42, 5654 (1971). 10.1063/1.1659996
36. D. J. DiMaria and J. H. Stathis, J. Appl. Phys. JAPIAU 0021-8979 89, 5015 (2001). 10.1063/1.1363680
37. D. J. DiMaria and J. R. Abernathey, J. Appl. Phys. JAPIAU 0021-8979 60, 1727 (1986). 10.1063/1.337265
38. D. J. DiMaria, M. V. Fischetti, M. Arienzo, and E. Tierney, J. Appl. Phys. JAPIAU 0021-8979 60, 1719 (1986). 10.1063/1.337264
39. D. Arnold, E. Cartier, and D. J. DiMaria, Phys. Rev. B PRBMDO 0163-1829 49, 10278 (1994). 10.1103/PhysRevB.49.10278
40. A. N. Nazarov, V. I. Kilchytska, Y. Houk, and D. Ballutaud, J. Appl. Phys. JAPIAU 0021-8979 94, 1823 (2003). 10.1063/1.1589591
41. J. J. Tzou, J. Y. C. Sun, and C. T. Sah, Appl. Phys. Lett. APPLAB 0003-6951 43, 861 (1983). 10.1063/1.94529
42. D. A. Buchanan and D. J. DiMaria, J. Appl. Phys. JAPIAU 0021-8979 67, 7439 (1990). 10.1063/1.344534
43. D. J. DiMaria, E. Cartier, and D. Arnold, J. Appl. Phys. JAPIAU 0021-8979 73, 3367 (1993). 10.1063/1.352936
44. A. Yankova, L. Do Thanh, and P. Balk, Solid-State Electron. SSELA5 0038-1101 30, 939 (1987). 10.1016/0038-1101(87)90130-4 (Pubitemid 17653561)
45. C. T. Sah, J. Y.-C. Sun, and J. J.-T. Tzou, J. Appl. Phys. JAPIAU 0021-8979 54, 2547 (1983). 10.1063/1.332324 (Pubitemid 13562976)
46. A. Nazarov, I. Osiyuk, I. Tyagulskii, V. Lysenko, S. Prucnal, J. Sun, L. Rebohle, W. Skorupa, and R. Yankov, J. Lumin. JLUMA8 0022-2313 121, 213 (2006). 10.1016/j.jlumin.2006.07.014 (Pubitemid 44642311)
47. S. Prucnal, L. Rebohle, A. N. Nazarov, I. Osiyuk, I. Tyagulskii, and W. Skorupa, Appl. Phys. B APDOEM 0946-2171 91, 123 (2008). 10.1007/s00340-008-2948- z
48. L. Rebohle, J. von Borany, H. Fröb, and W. Skorupa, Appl. Phys. B APDOEM 0946-2171 71, 131 (2000). 10.1007/PL00006966
49. A. N. Nazarov, I. N. Osiyuk, J. M. Sun, R. A. Yankov, W. Skorupa, I. P. Tyagulskii, V. S. Lysenko, S. Prucnal, T. Gebel, and L. Rebohle, Appl. Phys. B APDOEM 0946-2171 87, 129 (2007). 10.1007/s00340-006-2534-1 (Pubitemid 46407984)