메뉴 건너뛰기




Volumn 71, Issue 19, 1997, Pages 2824-2826

Hot electron impact excitation cross-section of Er3+ and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRON TUNNELING; ELECTRONS; IONS; MOS DEVICES; PHOTOLUMINESCENCE; SUBSTRATES; TUNNEL DIODES;

EID: 0031276069     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120147     Document Type: Article
Times cited : (40)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.