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Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 755-760

Rare earth ion implantation for silicon based light emission

(8) Skorupa, W a,b Sun, J M a Prucnal, S a Rebohle, L b Gebel, T b Nazarov, A N c Osiyuk, I N c Helm, M a,b

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

b Nanoparc GmbH (Germany)

c INSTITUTE OF HYDROBIOLOGY (Ukraine)

Author keywords

Biosensing; Eletroluminescence; Rare earth ion implantation; Silicon based light emission

Indexed keywords

CHARGE TRAPPING; EFFICIENCY; INDIUM COMPOUNDS; LIGHT; LIGHT EMISSION; METAL IONS; METALS; RARE EARTHS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; TIN OXIDES; TRANSPARENT ELECTRODES;

BIOSENSING; CHARGE TRAPPING CHARACTERISTICS; ELETROLUMINESCENCE; EXTERNAL QUANTUM EFFICIENCY; LIGHT EMITTING DEVICES; RARE EARTH IONS; SILICON DIOXIDE LAYERS; SILICON-BASED;

ION IMPLANTATION;

EID: 33750504311 PISSN: 10120394 EISSN: 16629779 Source Type: Book Series
DOI: 10.4028/www.scientific.net/SSP.108-109.755 Document Type: Conference Paper

Times cited : (10)

References (9)

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