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Volumn 9780521763448, Issue , 2009, Pages 1-457

Semiconductor devices for high-speed optoelectronics

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; OPTICAL COMMUNICATION; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; REVIEWS; SPEED; TRANSISTORS;

EID: 84925082008     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1017/CBO9780511635595     Document Type: Book
Times cited : (152)

References (115)
  • 1
    • 85032414811 scopus 로고    scopus 로고
    • web site on semiconductors
    • Ioffe Institute of the Russian Academy of Sciences web site on semiconductors, www.ioffe.ru/SVA/NSM/Semicond/.
  • 6
    • 84925138039 scopus 로고    scopus 로고
    • Wide bandgap and other non-iii-v rf transistors: Trends and prospects
    • ASU Tempe, 25 March
    • F. Schwierz, Wide bandgap and other non-III-V RF transistors: trends and prospects, CSSER 2004 Spring Lecture Series, ASU Tempe, 25 March 2004, www.eas.asu.edu/~vasilesk/EEE532/Talk_ASU_short.ppt.
    • (2004) CSSER 2004 Spring Lecture Series
    • Schwierz, F.1
  • 8
    • 0141990606 scopus 로고    scopus 로고
    • Band parameters for nitrogen-containing semiconductors
    • I. Vurgaftman and J. R. Meyer, Band parameters for nitrogen-containing semiconductors. Journal of Applied Physics, 94:6 (2003), 3675–3696.
    • (2003) Journal of Applied Physics , vol.94 , Issue.6 , pp. 3675-3696
    • Vurgaftman, I.1    Meyer, J.R.2
  • 9
    • 85032411426 scopus 로고    scopus 로고
    • Electron and hole impact ionization coefficients at very high electric fields in semiconductors
    • F. M. Abou El-Ela, I. M. Hamada, Electron and hole impact ionization coefficients at very high electric fields in semiconductors. Fizika A, 13:3 (2004), 89–104.
    • (2004) Fizika A , vol.13 , Issue.3 , pp. 89-104
    • Abou El-Ela, F.M.1    Hamada, I.M.2
  • 12
    • 4344709702 scopus 로고    scopus 로고
    • (Dunod, 2002) [English translation: OptoelectronicsCambridge University Press
    • E. Rosencher and B. Vinter, Optoélectronique (Dunod, 2002) [English translation: Optoelectronics(Cambridge University Press, 2002)].
    • (2002) Optoélectronique
    • Rosencher, E.1    Vinter, B.2
  • 15
    • 36149021650 scopus 로고
    • Optical absorption of gallium arsenide between 0.6 and 2.75 ev
    • M. D. Sturge, Optical absorption of gallium arsenide between 0.6 and 2.75 eV. Physical Review, 127 (1962), 768–773.
    • (1962) Physical Review , vol.127 , pp. 768-773
    • Sturge, M.D.1
  • 17
    • 0000281070 scopus 로고
    • Optical properties of highquality in gaas/inalas multiple quantum wells
    • S. Gupta, P. K. Bhattacharya, J. Pamulapati, and G. Mourou, Optical properties of highquality In GaAs/InAlAs multiple quantum wells. Journal of Applied Physics, 69:5 (1991), 3219–3225.
    • (1991) Journal of Applied Physics , vol.69 , Issue.5 , pp. 3219-3225
    • Gupta, S.1    Bhattacharya, P.K.2    Pamulapati, J.3    Mourou, G.4
  • 19
    • 35148886794 scopus 로고
    • Andw. Shockley, photon-radiative recombination of electrons and holes in germanium
    • W. van Roosbroeck andW. Shockley, Photon-radiative recombination of electrons and holes in germanium. Physical Review, 94 (1954), 1558–1560.
    • (1954) Physical Review , vol.94 , pp. 1558-1560
    • Van Roosbroeck, W.1
  • 20
    • 84983820858 scopus 로고
    • An accurate approximation of the generalized einstein relation for degenerate semiconductors
    • N. G. Nilsson, An accurate approximation of the generalized Einstein relation for degenerate semiconductors. Physica Status Solidi (a), 19:1 (1973), K75–K78.
    • (1973) Physica Status Solidi (A) , vol.19 , Issue.1 , pp. K75-K78
    • Nilsson, N.G.1
  • 24
    • 0001430402 scopus 로고
    • From approximations to exact relations for characteristic impedances
    • W. Hilberg, From approximations to exact relations for characteristic impedances. IEEE Transactions on Microwave Theory and Techniques, 17:5 (1969), 259–265.
    • (1969) IEEE Transactions on Microwave Theory and Techniques , vol.17 , Issue.5 , pp. 259-265
    • Hilberg, W.1
  • 26
    • 18844426247 scopus 로고    scopus 로고
    • Conical inductors for broadband applications
    • T. A. Winslow, Conical inductors for broadband applications. IEEE Microwave Magazine, 6:1 (2005), 68–72.
    • (2005) IEEE Microwave Magazine , vol.6 , Issue.1 , pp. 68-72
    • Winslow, T.A.1
  • 29
    • 64549102876 scopus 로고    scopus 로고
    • Alinas/gainas mhemts on silicon substrates grown by mocvd
    • Kei May Lau, Chak Wah Tang, Haiou Li, and Zhenyu Zhong, AlInAs/GaInAs mHEMTs on silicon substrates grown by MOCVD. Proceedings of IEDM 2008, (2008), 723–726.
    • (2008) Proceedings of IEDM 2008 , pp. 723-726
    • Lau, K.M.1    Tang, C.W.2    Li, H.3    Zhong, Z.4
  • 30
    • 0018491470 scopus 로고    scopus 로고
    • Bandgap narrowing in moderately to heavily doped silicon
    • H. P. D. Lanyon and R. A. Tuft, Bandgap narrowing in moderately to heavily doped silicon. IEEE Transactions on Electron Devices, 26:7 (2979), 1014–1018.
    • IEEE Transactions on Electron Devices , vol.26 , Issue.7 , pp. 1014-1018
    • Lanyon, H.1    Tuft, R.A.2
  • 32
    • 0343048033 scopus 로고
    • Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of inalas/ingaas/inalgaas dhbts
    • C-H. Huang, T-L. Lee, and H-H. Lin, Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs. Solid-State Electronics, 38:10 (1995), 1765–1770.
    • (1995) Solid-State Electronics , vol.38 , Issue.10 , pp. 1765-1770
    • Huang, C.-H.1    Lee, T.-L.2    Lin, H.-H.3
  • 39
    • 85032396122 scopus 로고    scopus 로고
    • Hamamatsu Photonics web site
    • Hamamatsu Photonics web site www.hamamatsu.com/.
  • 41
    • 0033888790 scopus 로고    scopus 로고
    • A low-cost edge-illuminated refracting-facet photodiode module with large bandwidth and high responsivity
    • H. Fukano and Y. Matsuoka, A low-cost edge-illuminated refracting-facet photodiode module with large bandwidth and high responsivity. Journal of Lightwave Technology, 18 (2000), 79–83.
    • (2000) Journal of Lightwave Technology , vol.18 , pp. 79-83
    • Fukano, H.1    Matsuoka, Y.2
  • 44
    • 0032025527 scopus 로고    scopus 로고
    • Inp-ingaas unitraveling-carrier photodiode with improved 3-db bandwidth of over 150 ghz
    • N. Shimizu, N. Watanabe, T. Furuta, and T. Ishibashi, InP-InGaAs unitraveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz. IEEE Photonics Technology Letters, 10:3 (1998), 412–414.
    • (1998) IEEE Photonics Technology Letters , vol.10 , Issue.3 , pp. 412-414
    • Shimizu, N.1    Watanabe, N.2    Furuta, T.3    Ishibashi, T.4
  • 45
    • 0034295734 scopus 로고    scopus 로고
    • Inp/lngaas uni-travelling-carrier photodiode with 310 ghz bandwidth
    • H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, InP/lnGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth. Electronics Letters, 36:21 (2000), 1809–1810.
    • (2000) Electronics Letters , vol.36 , Issue.21 , pp. 1809-1810
    • Ito, H.1    Furuta, T.2    Kodama, S.3    Ishibashi, T.4
  • 46
    • 84922644221 scopus 로고
    • Multiplication noise in uniform avalanche diodes
    • R. J. McIntyre, Multiplication noise in uniform avalanche diodes. IEEE Transactions on Electron Devices, 13:1 (1966), 164–168.
    • (1966) IEEE Transactions on Electron Devices , vol.13 , Issue.1 , pp. 164-168
    • McIntyre, R.J.1
  • 47
    • 0033898566 scopus 로고    scopus 로고
    • Dead-space-based theory correctly predicts excess noise factor for thin gaas and algaas avalanche photodiodes
    • M. A. Saleh, M. M. Hayat, B. E. A. Saleh, and M. C. Teich, Dead-space-based theory correctly predicts excess noise factor for thin GaAs and AlGaAs avalanche photodiodes. IEEE Transactions on Electron Devices, 47:3 (2000), 625–633.
    • (2000) IEEE Transactions on Electron Devices , vol.47 , Issue.3 , pp. 625-633
    • Saleh, M.A.1    Hayat, M.M.2    Saleh, B.E.3    Teich, M.C.4
  • 48
  • 49
    • 0000512292 scopus 로고
    • Avalanche-photodiode frequency response
    • R. B. Emmons, Avalanche-photodiode frequency response. Journal of Applied Physics, 38:9 (1967), 3705–3714.
    • (1967) Journal of Applied Physics , vol.38 , Issue.9 , pp. 3705-3714
    • Emmons, R.B.1
  • 50
    • 0004481067 scopus 로고
    • Frequency response of pin avalanching photodiodes
    • J. J. Chang, Frequency response of PIN avalanching photodiodes. IEEE Transactions on Electron Devices, 14:3 (1967), 139–145.
    • (1967) IEEE Transactions on Electron Devices , vol.14 , Issue.3 , pp. 139-145
    • Chang, J.J.1
  • 51
    • 0030781548 scopus 로고    scopus 로고
    • High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 ghz gain-bandwidth product
    • H. Nie, K. A. Anselm, C. Hu, S. S. Murtaza, B. G. Streetman, and J. C. Campbell, High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product. Applied Physics Letters, 70 (1997), 161–163.
    • (1997) Applied Physics Letters , vol.70 , pp. 161-163
    • Nie, H.1    Anselm, K.A.2    Hu, C.3    Murtaza, S.S.4    Streetman, B.G.5    Campbell, J.C.6
  • 52
    • 0032028734 scopus 로고    scopus 로고
    • Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product
    • H. Nie, K. A. Anselm, C. Lenox, P. Yuan, C. Hu, G. Kinsey, B. G. Streetman, and J. C. Campbell, Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product. IEEE Photonics Technology Letters, 10:3 (1998), 409–411.
    • (1998) IEEE Photonics Technology Letters , vol.10 , Issue.3 , pp. 409-411
    • Nie, H.1    Anselm, K.A.2    Lenox, C.3    Yuan, P.4    Hu, C.5    Kinsey, G.6    Streetman, B.G.7    Campbell, J.C.8
  • 53
    • 0035423510 scopus 로고    scopus 로고
    • Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 ghz
    • G. S. Kinsey, J. C. Campbell, and A. G. Dentai, Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz. IEEE Photonics Technology Letters, 13:8 (2001), 842–844.
    • (2001) IEEE Photonics Technology Letters , vol.13 , Issue.8 , pp. 842-844
    • Kinsey, G.S.1    Campbell, J.C.2    Dentai, A.G.3
  • 57
    • 0000154472 scopus 로고    scopus 로고
    • A review of recent progresses in inp-based optoelectronic integrated circuit receiver front-ends
    • also inHigh-Speed Circuits for Lightwave Communications, edn. Keh-Chung Wang (World Scientific, 1999)
    • R. H. Walden, A review of recent progresses in InP-based optoelectronic integrated circuit receiver front-ends. International Journal of High-Speed Electronics and Systems, 9:2 (1998), 631–642; also in High-Speed Circuits for Lightwave Communications, edn. Keh-Chung Wang (World Scientific, 1999).
    • (1998) International Journal of High-Speed Electronics and Systems , vol.9 , Issue.2 , pp. 631-642
    • Walden, R.H.1
  • 61
    • 42149162155 scopus 로고    scopus 로고
    • 40-gbps monolithically integrated transceivers in cmos photonics. Silicon photonics iii
    • T. Pinguet, B. Analui, G. Masini, V. Sadagopan, and S. Gloeckner, 40-Gbps monolithically integrated transceivers in CMOS photonics. Silicon Photonics III, Proceedings of the SPIE, 6898 (2008) 5–14.
    • (2008) Proceedings of the SPIE , vol.6898 , pp. 5-14
    • Pinguet, T.1    Analui, B.2    Masini, G.3    Sadagopan, V.4    Gloeckner, S.5
  • 63
    • 0035366259 scopus 로고    scopus 로고
    • Kimerling, p-i-n ge on si photodetectors for the near infrared: From model to demonstration
    • C. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimerling, p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration, IEEE Transactions on Electron Devices. 48:6 (2001), 1092–1096.
    • (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.6 , pp. 1092-1096
    • Masini, C.1    Colace, L.2    Assanto, G.3    Luan, H.-C.4
  • 64
    • 80052306868 scopus 로고    scopus 로고
    • High-speed near infrared optical receivers based on ge waveguide photodetectors integrated in a cmos process
    • Hindawi Publishing Corporation, Article ID 96572 (5 pages)
    • G. Masini, S. Sahni, G. Capellini, J. Witzens, and C. Gunn, High-speed near infrared optical receivers based on Ge waveguide photodetectors integrated in a CMOS process. In Advances in Optical Technologies (Hindawi Publishing Corporation, 2008), Article ID 96572 (5 pages). doi: 10.1155/2008/196572.
    • (2008) Advances in Optical Technologies
    • Masini, G.1    Sahni, S.2    Capellini, G.3    Witzens, J.4    Gunn, C.5
  • 65
    • 0035398364 scopus 로고    scopus 로고
    • A monolithically integrated 1-gb/s optical receiver in 1-μm cmos technology
    • H. Zimmermann and T. Heide, A monolithically integrated 1-Gb/s optical receiver in 1-μm CMOS technology. IEEE Photonics Technology Letters, 13:7 (2001), 711–713.
    • (2001) IEEE Photonics Technology Letters , vol.13 , Issue.7 , pp. 711-713
    • Zimmermann, H.1    Heide, T.2
  • 66
    • 2342607536 scopus 로고    scopus 로고
    • 2.5 gbit/s silicon receiver oeic with large diameter photodiode
    • R. Swoboda and H. Zimmermann, 2.5 Gbit/s silicon receiver OEIC with large diameter photodiode. Electronics Letters, 40:8 (2004), 505–507.
    • (2004) Electronics Letters , vol.40 , Issue.8 , pp. 505-507
    • Swoboda, R.1    Zimmermann, H.2
  • 68
    • 0037311575 scopus 로고    scopus 로고
    • A proposed ultra low-noise optical receiver for 1.55 μm applications
    • V. Rajamani and P. Chakrabarti, A proposed ultra low-noise optical receiver for 1.55 μm applications. Optical and Quantum Electronics, 35 (2003), 195–209.
    • (2003) Optical and Quantum Electronics , vol.35 , pp. 195-209
    • Rajamani, V.1    Chakrabarti, P.2
  • 69
    • 24144468648 scopus 로고    scopus 로고
    • Design and analysis of a single hbt-based optical receiver front-end
    • P. Chakrabarti, P. Kalra, S. Agrawal, G. Gupta, and N. Menon, Design and analysis of a single HBT-based optical receiver front-end. Solid State Electronics, 49:8 (2005), 1396–1404.
    • (2005) Solid State Electronics , vol.49 , Issue.8 , pp. 1396-1404
    • Chakrabarti, P.1    Kalra, P.2    Agrawal, S.3    Gupta, G.4    Menon, N.5
  • 70
    • 0001060007 scopus 로고
    • Small-area, double-heterostructure aluminum-gallium arsenide electroluminescent diode sources for optical-fiber transmission lines
    • C. A. Burrus and B. I. Miller, Small-area, double-heterostructure aluminum-gallium arsenide electroluminescent diode sources for optical-fiber transmission lines. Optics Communications, 4:4 (1971), 307–309.
    • (1971) Optics Communications , vol.4 , Issue.4 , pp. 307-309
    • Burrus, C.A.1    Miller, B.I.2
  • 71
    • 0015658247 scopus 로고
    • A stripe-geometry double-heterostructure amplifiedspontaneous-emission (Superluminescent) diode
    • Tien-Pei Lee, C. Burrus, and B. Miller, A stripe-geometry double-heterostructure amplifiedspontaneous-emission (superluminescent) diode. IEEE Journal of Quantum Electronics, 9:8 (1973), 820–828.
    • (1973) IEEE Journal of Quantum Electronics , vol.9 , Issue.8 , pp. 820-828
    • Lee, T.-P.1    Burrus, C.2    Miller, B.3
  • 72
    • 0036685308 scopus 로고    scopus 로고
    • Michalzik, data transmission using gaas-based inas-ingaas quantum dot leds emitting at 1.3 μm wavelength
    • M. Kicherer, A. Fiore, U. Oesterle, R. P. Stanley, M. Ilegems, and R. Michalzik, Data transmission using GaAs-based InAs-InGaAs quantum dot LEDs emitting at 1.3 μm wavelength. Electronics Letters, 38:16 (2002), 906–907.
    • (2002) Electronics Letters , vol.38 , Issue.16 , pp. 906-907
    • Kicherer, M.1    Fiore, A.2    Oesterle, U.3    Stanley, R.P.4    Ilegems, M.5
  • 73
    • 0022208218 scopus 로고
    • Determination of the refractive index of ingaasp epitaxial layers by mode line luminescence spectroscopy
    • C. Henry, L. Johnson, R. Logan, and D. Clarke, Determination of the refractive index of InGaAsP epitaxial layers by mode line luminescence spectroscopy. IEEE Journal of Quantum Electronics, 21:12 (1985) 1887–1892.
    • (1985) IEEE Journal of Quantum Electronics , vol.21 , Issue.12 , pp. 1887-1892
    • Henry, C.1    Johnson, L.2    Logan, R.3    Clarke, D.4
  • 79
    • 21044437832 scopus 로고    scopus 로고
    • Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: Temperature-insensitive 10 gb s−1 directly modulated lasers and 40 gb s−1 signal-regenerative amplifiers
    • M. Sugawara, N. Hatori, M. Ishida, H. Ebe, Y. Arakawa, T. Akiyama, K. Otsubo, T. Yamamoto and Y. Nakata, Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1 directly modulated lasers and 40 Gb s−1 signal-regenerative amplifiers. Journal of Physics D: Applied Physics, 38:13 (2005), 2126–2134.
    • (2005) Journal of Physics D: Applied Physics , vol.38 , Issue.13 , pp. 2126-2134
    • Sugawara, M.1    Hatori, N.2    Ishida, M.3    Ebe, H.4    Arakawa, Y.5    Akiyama, T.6    Otsubo, K.7    Yamamoto, T.8    Nakata, Y.9
  • 80
    • 0020090793 scopus 로고
    • Theory of linewidth of semiconductor lasers
    • C. H. Henry, Theory of linewidth of semiconductor lasers. IEEE Journal of Quantum Electronics, 18 (1982), 259–264.
    • (1982) IEEE Journal of Quantum Electronics , vol.18 , pp. 259-264
    • Henry, C.H.1
  • 81
    • 0020814638 scopus 로고
    • Theory of the phase noise and power spectrum of a single-mode injection laser
    • C. H. Henry, Theory of the phase noise and power spectrum of a single-mode injection laser. IEEE Journal of Quantum Electronics, 19 (1983), 1391–1397.
    • (1983) IEEE Journal of Quantum Electronics , vol.19 , pp. 1391-1397
    • Henry, C.H.1
  • 85
    • 0032668578 scopus 로고    scopus 로고
    • Widely tunable sampled grating dbr laser with integrated electroabsorption modulator
    • B. Mason, G. A. Fish, S. P. DenBaars, and L. A. Coldren, Widely tunable sampled grating DBR laser with integrated electroabsorption modulator. IEEE Photonics Technology Letters, 11:6 (1999), 638–640.
    • (1999) IEEE Photonics Technology Letters , vol.11 , Issue.6 , pp. 638-640
    • Mason, B.1    Fish, G.A.2    DenBaars, S.P.3    Coldren, L.A.4
  • 86
    • 0017453461 scopus 로고
    • Application of mic formulas to a class of integratedoptics modulator analyses: A simple transformation
    • E. Yamashita, K. Atsuki, and T. Mori, Application of MIC formulas to a class of integratedoptics modulator analyses: a simple transformation. IEEE Transactions on Microwave Theory and Techniques, 25:2 (1977), 146–150.
    • (1977) IEEE Transactions on Microwave Theory and Techniques , vol.25 , Issue.2 , pp. 146-150
    • Yamashita, E.1    Atsuki, K.2    Mori, T.3
  • 88
    • 0024019533 scopus 로고
    • High speed iii-v electrooptic waveguide modulators at λ ≈1.3μm
    • S. Y. Wang and S. H. Lin, High speed III-V electrooptic waveguide modulators at λ ≈1.3μm. Journal of Lightwave Technology, 6:6 (1988), 758–771.
    • (1988) Journal of Lightwave Technology , vol.6 , Issue.6 , pp. 758-771
    • Wang, S.Y.1    Lin, S.H.2
  • 89
    • 0032715704 scopus 로고    scopus 로고
    • Push–pull poled polymer mach–zehnder modulators with a single microstrip line electrode
    • W. Wang, Y. Shi, D. J. Olson, W. Lin, and J. Bechtel, Push–pull poled polymer Mach–Zehnder modulators with a single microstrip line electrode. IEEE Photonics Technology Letters, 11 (1999), 51–53.
    • (1999) IEEE Photonics Technology Letters , vol.11 , pp. 51-53
    • Wang, W.1    Shi, Y.2    Olson, D.J.3    Lin, W.4    Bechtel, J.5
  • 90
    • 4544351331 scopus 로고    scopus 로고
    • Multi-sectional modeling of high-speed electro-optic modulators integrated in a microwave circuit cad environment
    • M. Pirola, F. Cappelluti, G. Giarola, and G. Ghione, Multi-sectional modeling of high-speed electro-optic modulators integrated in a microwave circuit CAD environment. Journal of Lightwave Technology, 21:12 (2003), 2989–2996.
    • (2003) Journal of Lightwave Technology , vol.21 , Issue.12 , pp. 2989-2996
    • Pirola, M.1    Cappelluti, F.2    Giarola, G.3    Ghione, G.4
  • 91
    • 0030401980 scopus 로고    scopus 로고
    • In traveling wave modulators which velocity to match?
    • R. Spickermann, S. R. Sakamono, and N. Dagli, In traveling wave modulators which velocity to match? LEOS Annual Meeting, (1996), 2:97–98.
    • (1996) LEOS Annual Meeting , vol.2 , pp. 97-98
    • Spickermann, R.1    Sakamono, S.R.2    Dagli, N.3
  • 93
    • 0032142010 scopus 로고    scopus 로고
    • Microwave attenuation reduction techniques for wide-band ti:Linbo3 optical modulators
    • E81-C
    • R. Madabhushi, Microwave attenuation reduction techniques for wide-band Ti:LiNbO3 optical modulators. IEICE Transactions on Electronics, E81-C:8 (1998), 1321–1327.
    • (1998) IEICE Transactions on Electronics , vol.8 , pp. 1321-1327
    • Madabhushi, R.1
  • 95
    • 0032255275 scopus 로고    scopus 로고
    • Broadband and low driving-voltage linbo3 optical modulators
    • O. Mitomi, K. Noguchi, and H. Miyazawa, Broadband and low driving-voltage LiNbO3 optical modulators. IEE Proceedings-J, 145:6 (1998), 360–364.
    • (1998) IEE Proceedings-J , vol.145 , Issue.6 , pp. 360-364
    • Mitomi, O.1    Noguchi, K.2    Miyazawa, H.3
  • 96
    • 0026122053 scopus 로고
    • High-speed iii-v semiconductor intensity modulators
    • R. G. Walker, High-speed III-V semiconductor intensity modulators. IEEE Journal on Quantum Electronics, 27:3 (1991), 654–667.
    • (1991) IEEE Journal on Quantum Electronics , vol.27 , Issue.3 , pp. 654-667
    • Walker, R.G.1
  • 98
    • 0031653838 scopus 로고    scopus 로고
    • Ingaasp-based mach–zehnder modulators for high-speed transmission systems
    • C. Rolland, InGaAsP-based Mach–Zehnder modulators for high-speed transmission systems. OFC’98 Technical Digest (1998), 283–284.
    • (1998) OFC’98 Technical Digest , pp. 283-284
    • Rolland, C.1
  • 104
    • 29744466798 scopus 로고
    • Electric field dependence of the exciton binding energy in gaas/alxga1−xas quantum wells
    • S. Nojima, Electric field dependence of the exciton binding energy in GaAs/AlxGa1−xAs quantum wells. Physical Review B 37 (1988), 9087–9088.
    • (1988) Physical Review B , vol.37 , pp. 9087-9088
    • Nojima, S.1
  • 107
    • 0028539394 scopus 로고
    • On the transmission performances and the chirp parameter of a multiple-quantum-well electroabsorption modulator
    • F. Dorgeuille and F. Devaux, On the transmission performances and the chirp parameter of a multiple-quantum-well electroabsorption modulator. IEEE Journal of Quantum Electronics, 30:11 (1994), 2565–2572.
    • (1994) IEEE Journal of Quantum Electronics , vol.30 , Issue.11 , pp. 2565-2572
    • Dorgeuille, F.1    Devaux, F.2
  • 108
    • 0030246814 scopus 로고    scopus 로고
    • Ultra-high-speed multiple-quantum-well electro-absorption optical modulators with integrated waveguides
    • T. Ido, S. Tanaka, M. Suzuki, M. Koizumi, H. Sano, and H. Inoue, Ultra-high-speed multiple-quantum-well electro-absorption optical modulators with integrated waveguides. Journal of Lightwave Technology, 14:9 (1996), 2026–2034.
    • (1996) Journal of Lightwave Technology , vol.14 , Issue.9 , pp. 2026-2034
    • Ido, T.1    Tanaka, S.2    Suzuki, M.3    Koizumi, M.4    Sano, H.5    Inoue, H.6
  • 109
    • 0035473373 scopus 로고    scopus 로고
    • High-saturation high-speed traveling-wave ingaasp-inp electroabsorption modulator
    • G. L. Li, S. A. Pappert, P. Mages, C. K. Sun, W. S. C. Chang, and P. K. L. Yu, High-saturation high-speed traveling-wave InGaAsP-InP electroabsorption modulator. IEEE Photonics Technology Letters, 13:10 (2001), 1076–1078.
    • (2001) IEEE Photonics Technology Letters , vol.13 , Issue.10 , pp. 1076-1078
    • Li, G.L.1    Pappert, S.A.2    Mages, P.3    Sun, C.K.4    Chang, W.S.5    Yu, P.K.6
  • 111
    • 33644974184 scopus 로고    scopus 로고
    • Uncooled laser sources for plug and play transceivers for datacom and telecom applications
    • M. Meliga, R. Paoletti, and C. Coriasso, Uncooled laser sources for plug and play transceivers for datacom and telecom applications. SPIE Proceedings 6020 (2005), 382–391.
    • (2005) SPIE Proceedings , vol.6020 , pp. 382-391
    • Meliga, M.1    Paoletti, R.2    Coriasso, C.3
  • 112
    • 0035279726 scopus 로고    scopus 로고
    • Wide bandwidth of over 50 ghz travelling-wave electrode electroabsorption modulator integrated dfb lasers
    • Y. Akage, K. Kawano, S. Oku, R. Iga, H. Okamoto, Y. Miyamoto, and H. Takeuchi, Wide bandwidth of over 50 GHz travelling-wave electrode electroabsorption modulator integrated DFB lasers. Electronics Letters, 37:5 (2001), 299–300.
    • (2001) Electronics Letters , vol.37 , Issue.5 , pp. 299-300
    • Akage, Y.1    Kawano, K.2    Oku, S.3    Iga, R.4    Okamoto, H.5    Miyamoto, Y.6    Takeuchi, H.7
  • 115
    • 0036713788 scopus 로고    scopus 로고
    • A 54-ghz distributed amplifier with 6-vpp output for a 40-gb/s linbo3 modulator driver
    • H. Shigematsu, M. Sato, T. Hirose, and Y. Watanabe, A 54-GHz distributed amplifier with 6-Vpp output for a 40-Gb/s LiNbO3 modulator driver. IEEE Journal of Solid-State Circuits, 37:9 (2002), 1100–1105.
    • (2002) IEEE Journal of Solid-State Circuits , vol.37 , Issue.9 , pp. 1100-1105
    • Shigematsu, H.1    Sato, M.2    Hirose, T.3    Watanabe, Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.