2.5 Gbit/s silicon receiver OEIC with large diameter photodiode

Electronics Letters

Volumn 40, Issue 8, 2004, Pages 505-507

  Swoboda, R ^a   Zimmermann, H ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BIT ERROR RATE; CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC IMPEDANCE; INTEGRATED OPTOELECTRONICS; OPTICAL FIBERS; PHOTODIODES; QUANTUM EFFICIENCY;

BIPOLAR CIRCUITS; PHOTODIODE CAPACITANCE;

SIGNAL RECEIVERS;

EID: 2342607536     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040346     Document Type: Article

References (4)

1. Brigati, S., Francescani, F., Gardino, D., Poletti, M., and Maglione, A.: 'A 20 Mbit/s integrated photoreceiver with digital outputs in 0.6 μm technology. Proc. ESSCIRC 2002, Florence, Italy, pp. 503-506
2. Förtsch, M., Zimmermann, H., and Pless, H.: '220 MHz optical receiver with large-area integrated PIN photodiode'. Proc. IEEE Int. Conf. on Sensors 2003, Toronto, Canada, pp. 1012-1015
3. Lang, M., Bronner, W., Benz, W., Ludwig, M., Hurm, V., Kaufel, G., Leuther, A., Rosenzweig, J., and Schlechtweg, M.: 'Complete monolithic integrated 2.5 Gbit/s optoelectronic receiver with large area MSM photodiode for 850 nm wavelength', Electron, Lett., 2001, 37, (20), pp. 1247-1249
4. Yamamoto, M., Kubo, M., and Nakao, K.: 'Si-OEIC with a built-in PIN-photodiode', IEEE Trans. Electron. Dev., 1995, ED-42, (1), pp. 58-63