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Electronics Letters

Volumn 38, Issue 16, 2002, Pages 906-907

Data transmission using GaAs-based InAs-InGaAs quantum dot LEDs emitting at 1.3 μm wavelength

(6) Kicherer, M a Fiore, A b Oesterle, U b Stanley, R P b Ilegems, M b Michalzik, R a

a UNIVERSITY OF ULM (Germany)

b EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CURRENT DENSITY; DATA COMMUNICATION SYSTEMS; ELECTROLUMINESCENCE; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; OPTICAL LINKS; PHOTODIODES; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

THRESHOLD CURRENT DENSITIES;

LIGHT EMITTING DIODES;

EID: 0036685308 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20020646 Document Type: Article

Times cited : (3)

References (7)

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7
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.