InP-InGaAs single HBT technology for photoreceiver OEIC's at 40 Gb/s and beyond

Journal of Lightwave Technology

Volumn 18, Issue 7, 2000, Pages 992-1000

  Huber, D ^a   Bauknecht, R ^c   Bergamaschi, C ^b   Bitter, M ^a   Huber, A ^a   Morf, T ^a   Neiger, A ^a   Rohner, M ^a   Schnyder, I ^a   Schwarz, V ^a   Jackel H ^a  

^a ETH ZURICH   (Switzerland)

^b Fachgruppe Angewundte S   (Switzerland)

^c Opto Speed AG   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; PHOTODIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

PHOTORECEIVERS; TRANSIMPEDANCE AMPLIFIERS;

INTEGRATED OPTOELECTRONICS;

EID: 0034227121     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.850745     Document Type: Article

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