High-saturation high-speed traveling-wave InGaAsP-InP electroabsorption modulator

IEEE Photonics Technology Letters

Volumn 13, Issue 10, 2001, Pages 1076-1078

  Li, G L ^a,b   Pappert, S A ^c   Mages, P ^b   Sun, C K ^c   Chang, W S C ^b   Yu, P K L ^b  

^a IEEE   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Navigation and Applied Sciences Department   (United States)

Author keywords

Broad band modulation; Electroabsorption; High saturation; Traveling wave modulator

Indexed keywords

ELETROABSORPTION MODULATOR (EAM);

ABSORPTION; BANDWIDTH; FREQUENCY RESPONSE; MICROWAVES; OPTICAL WAVEGUIDES; SCATTERING PARAMETERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

MODULATORS;

EID: 0035473373     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.950740     Document Type: Article

References (6)

1. Microwave structures for traveling-wave MQW electro-absorption modulators for wide band 1.3 μm photonic links
2. Polarization-insensitive traveling-wave electrode electroabsorption (TW-EA) modulator with bandwidth over 50 GHz and driving voltage less than 2 V
3. 25-GHz Polarization-insensitive electroabsorption modulators with traveling-wave electrodes
4. Ultra high-speed traveling wave electroabsorption modulator: Design and analysis
5. Design and fabrication of traveling wave electroabsorption modulator