High-mobility hydrogen-doped In2 O3 transparent conductive oxide for a-Si:H/c-Si heterojunction solar cells

Solar Energy Materials and Solar Cells

Volumn 93, Issue 6-7, 2009, Pages 851-854

  Koida, T ^a   Fujiwara, H ^a   Kondo, M ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Amorphous silicon; Heterojunction solar cell; High mobility; Indium tin oxide; Optical loss; Sputtering; Transparent conductive oxide

Indexed keywords

ABSORPTION LOSS; CRYSTALLINE SILICONS; HETEROJUNCTION SOLAR CELL; HIGH MOBILITY; HYDROGENATED AMORPHOUS SILICONS (ASI:H); INDIUM TIN OXIDE; MATRIXES; POST-ANNEALING TREATMENTS; SHORT-CIRCUIT CURRENT DENSITIES; SN-DOPED; SPUTTERING DEPOSITIONS; SPUTTERING SYSTEMS; SUBSTRATE HEATING; TRANSPARENT CONDUCTING OXIDE ELECTRODES; TRANSPARENT CONDUCTIVE OXIDE; VISIBLE AND NEAR-INFRARED;

CELL MEMBRANES; CONVERSION EFFICIENCY; HYDROGEN; INDIUM; PHOTOLITHOGRAPHY; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR POWER GENERATION; SWITCHING CIRCUITS; TIN; TITANIUM COMPOUNDS; WATER VAPOR;

AMORPHOUS SILICON;

EID: 67349192204     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.09.047     Document Type: Article

References (14)

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