In situ Hall effect and conductivity measurements of ITO thin films

Solid State Ionics

Volumn 262, Issue , 2014, Pages 636-639

  Hohmann, Mareike V ^a   Wachau, André ^a   Klein, Andreas ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Defect equilibrium; Hall effect; ITO; Oxygen defects; Sn segregation

Indexed keywords

DEFECTS; ELECTRIC CONDUCTIVITY MEASUREMENT; GRAIN BOUNDARIES; HALL EFFECT; OXYGEN; THIN FILMS; TIN;

CONDUCTIVITY MEASUREMENTS; ELECTRICAL CONDUCTIVITY MEASUREMENTS; ITO; LONG TERM PROCESS; OXYGEN DEFECT; POST DEPOSITION TREATMENT; TEMPERATURE-DEPENDENT MEASUREMENTS; TRANSPARENT CONDUCTIVE OXIDES;

ELECTRIC PROPERTIES;

EID: 84903310188     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssi.2013.10.004     Document Type: Article

References (4)

1. D. Ginley, H. Hosono, and D. Paine Handbook of Transparent Conductors 2010 Springer New York
2. C. Granqvist Sol. Energy Mater. Sol. Cells 91 2007 1529
3. A. Klein, C. Körber, A. Wachau, F. Säuberlich, Y. Gassenbauer, S. Harvey, D. Proffit, and T. Mason Mater. 3 2010 4892
4. A. Klein J. Am. Ceram. Soc. 96 2013