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Volumn 354, Issue 19-25, 2008, Pages 2805-2808

Structural and electrical properties of hydrogen-doped In2 O3 films fabricated by solid-phase crystallization

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Ceramics; Conductivity; Crystal growth; Indium tin oxide and other transparent conductors; Sputtering; X ray diffraction

Indexed keywords

CERAMIC MATERIALS; CRYSTAL GROWTH; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; INDIUM COMPOUNDS; SPUTTERING; X RAY DIFFRACTION;

INDIUM TIN OXIDE; SOLID PHASE CRYSTALLIZATION; TRANSPARENT CONDUCTORS;

AMORPHOUS FILMS;

EID: 42649113089 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2007.09.076 Document Type: Article

Times cited : (46)

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