Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition

Nanoscale Research Letters

Volumn 10, Issue 1, 2015, Pages

  Wang, Aiji ^a   Chen, Tingfang ^a   Lu, Shuhua ^a,b   Wu, Zhenglong ^a   Li, Yongliang ^a   Chen, He ^a   Wang, Yinshu ^a  

^a BEIJING NORMAL UNIVERSITY   (China)

^b PEOPLE S PUBLIC SECURITY UNIVERSITY OF CHINA   (China)

Author keywords

Al doping; ALD; Annealing atmospheres; Electrical properties; Optical properties; ZnO films

Indexed keywords

ALUMINUM; ANNEALING; ATOMIC LAYER DEPOSITION; BLUE SHIFT; ELECTRIC PROPERTIES; FILM GROWTH; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL PROPERTIES; ZINC; ZINC OXIDE;

AL-DOPED ZNO FILMS; AL-DOPING; ANNEALING ATMOSPHERES; FILM GROWTH MODE; NONRADIATIVE CENTERS; QUADRATIC DEPENDENCE; SUBSTRATE SURFACE; ZNO FILMS;

SEMICONDUCTOR DOPING;

EID: 84923815358     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/s11671-015-0801-y     Document Type: Article

References (33)

1. Facchetti A, Marks T. Transparent Electronics: From Synthesis To Applications. In: Facchetti A, Marks TJ, editors. Preface. Chichester, UK: Wiley; 2010.
2. Ellmer K. Past achievements and future challenges in the development of optically transparent electrodes. Nat Photon. 2012;6:809–17.
3. Noh J-Y, Kim H, Kim Y-S, Park CH. Electron doping limit in Al-doped ZnO by donor-acceptor interactions. J Appl Phys. 2013;113:153703.
4. Lin YC, Jian YC, Jiang JH. A study on the wet etching behavior of AZO (ZnO:Al) transparent conducting film. Appl Surf Sci. 2008;254:2671–7.
5. Janotti A, Van de Walle CG. Fundamentals of zinc oxide as a semiconductor. Rep Prog Phys. 2009;72:126501.
6. Leenheer A, Perkins J, van Hest M, Berry J, O’Hayre R, Ginley D. General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films. Phys Rev B. 2008;77:115215.
7. Bhosle V, Tiwari A, Narayan J. Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO. Appl Phys Lett. 2006;88:032106.
8. Steinhauser J, Faÿ S, Oliveira N, Vallat-Sauvain E, Ballif C. Transition between grain boundary and intragrain scattering transport mechanisms in boron-doped zinc oxide thin films. Appl Phys Lett. 2007;90:142107.
9. Hung-Chun Lai H, Basheer T, Kuznetsov VL, Egdell RG, Jacobs RMJ, Pepper M, et al. Dopant-induced bandgap shift in Al-doped ZnO thin films prepared by spray pyrolysis. J Appl Phys. 2012;112:083708.
10. Banerjee P, Lee W-J, Bae K-R, Lee SB, Rubloff GW. Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films. J Appl Phys. 2010;108:043504.
11. Bikowski A, Welzel T, Ellmer K. The impact of negative oxygen ion bombardment on electronic and structural properties of magnetron sputtered ZnO:Al films. Appl Phys Lett. 2013;102:242106.
12. Kim D, Yun I, Kim H. Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells. Curr Appl Phys. 2010;10:S459–62.
13. Liu Y, Li Q, Shao H. Optical and photoluminescent properties of Al-doped zinc oxide thin films by pulsed laser deposition. J Alloys Compd. 2009;485:529–31.
14. 3 alloy films using atomic layer deposition techniques. Chem Mater. 2003;15:S1020–8.
15. Maeng WJ, Lee J-w, Lee JH, Chung K-B, Park J-S. Studies on optical, structural and electrical properties of atomic layer deposited Al-doped ZnO thin films with various Al concentrations and deposition temperatures. J Phys D Appl Phys. 2011;44:445305.
16. Wójcik A, Godlewski M, Guziewicz E, Minikayev R, Paszkowicz W. Controlling of preferential growth mode of ZnO thin films grown by atomic layer deposition. J Crys Growth. 2008;310:284–9.
17. Yamada A, Sang B, Konagai M. Atomic layer deposition of ZnO transparent conducting oxides. Appl Surf Sci. 1997;112:216–22.
18. Lee D-J, Kim H-M, Kwon J-Y, Choi H, Kim S-H, Kim K-B. Structural and electrical properties of atomic layer deposited Al-doped ZnO films. Adv Funct Mater. 2011;21:448–55.
19. Kim Y, Lee W, Jung D-R, Kim J, Nam S, Kim H, et al. Optical and electronic properties of post-annealed ZnO:Al thin films. Appl Phys Lett. 2010;96:171902.
20. Lin S-S, Huang J-L, Šajgalik P. The properties of heavily Al-doped ZnO films before and after annealing in the different atmosphere. Surf Coat Tech. 2004;185:254–63.
21. Zhou Y, Kelly PJ, Postill A, Abu-Zeid O, Alnajjar AA. The characteristics of aluminium-doped zinc oxide films prepared by pulsed magnetron sputtering from powder targets. Thin Solid Films. 2004;447–448:33–9.
22. Morinaga Y, Sakuragi K, Fujimura N, Ito T. Effect of Ce doping on the growth of ZnO thin films. J Crys Growth. 1997;174:691–5.
23. Sun Y, Fox NA, Riley DJ, Ashfold MNR. Hydrothermal growth of ZnO nanorods aligned parallel to the substrate surface. J Phys Chem C. 2008;112:9234–9.
24. Park KC, Ma DY, Kim KH. The physical properties of Al-doped zinc oxide films prepared by RF magnetron sputtering. Thin Solid Films. 1997;305:201–9.
25. Wilk GD, Wallace RM, Anthony JM. High-κ gate dielectrics: current status and materials properties considerations. J Appl Phys. 2001;89:5243.
26. Van Vechten JA, Bergstresser TK. Electronic structures of semiconductor alloys. Phys Rev B. 1970;1:3351–8.
27. Ahn CH, Kim YY, Kim DC, Mohanta SK, Cho HK. A comparative analysis of deep level emission in ZnO layers deposited by various methods. J Appl Phys. 2009;105:013502.
28. Baraki R, Zierep P, Erdem E, Weber S, Granzow T. Electron paramagnetic resonance study of ZnO varistor material. J Phys Condens Matter. 2014;26:115801.
29. Kim Y-S, Tai W-P. Electrical and optical properties of Al-doped ZnO thin films by sol-gel process. Appl Surf Sci. 2007;253:4911–6.
30. Janotti A, Van de Walle CG. Native point defects in ZnO. Phys Rev B. 2007;76:165202.
31. Park H-W, Chung K-B, Park J-S, Ji S, Song K, Lim H, et al. Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration. Ceramics Int. 2015;41:1641–5.
32. Owen JI. Growth, Etching, and Stability of Sputtered ZnO: AI for Thin-Film Silicon Solar Cells. In: Owen JI, editor. Fundamentals. Germany: Forschungszentrum Jülich; 2011.
33. Major S, Banerjee A, Chopra KL. Annealing studies of undoped and indium-doped films of zinc oxide. Thin Solid Films. 1984;122:31–43.