Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration

Ceramics International

Volumn 41, Issue 1, 2015, Pages 1641-1645

  Park, Hyun Woo ^a   Chung, Kwun Bum ^a   Park, Jin Seong ^b   Ji, Seungmuk ^c   Song, Kyungjun ^c   Lim, Hyuneui ^c   Jang, Moon Hyung ^d  

^a Dongguk University   (South Korea)

^b Hanyang University   (South Korea)

^c Korea Institute of Machine and Materials   (South Korea)

^d UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

Al doping concentration; Al doped ZnO; Conducting mechanism; Electronic structure

Indexed keywords

ATOMIC LAYER DEPOSITION; CONDUCTION BANDS; CONDUCTIVE FILMS; ELECTRONIC STRUCTURE; ENERGY GAP; METALLIC FILMS; SEMICONDUCTOR DOPING; ZINC OXIDE;

AL-DOPED ZNO; AL-DOPED ZNO FILMS; AL-DOPING; ATOMIC CONFIGURATION; BAND ALIGNMENTS; CONDUCTING MECHANISM; CONDUCTING PROPERTIES; CONDUCTION BAND OFFSET;

ALUMINUM;

EID: 84923093320     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2014.09.102     Document Type: Article

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