Magnetoresistance and charge transport in graphene governed by nitrogen dopants

ACS Nano

Volumn 9, Issue 2, 2015, Pages 1360-1366

  Rein, Markus ^a   Richter, Nils ^a   Parvez, Khaled ^b   Feng, Xinliang ^c   Sachdev, Hermann ^b   Kläui, Mathias ^a   Müllen, Klaus ^b  

^a JOHANNES GUTENBERG UNIVERSITY   (Germany)

^b MAX PLANCK INSTITUTE FOR POLYMER RESEARCH   (Germany)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

CVD graphene; negative magnetoresistance; nitrogen doping; weak localization

Indexed keywords

CARRIER CONCENTRATION; CARRIER TRANSPORT; COHERENT SCATTERING; GRAPHENE; MAGNETORESISTANCE; NITROGEN; QUANTUM CHEMISTRY; SILICON; TEMPERATURE DISTRIBUTION; TRANSPORT PROPERTIES;

CHEMICAL VAPOR DEPOSITIONS (CVD); CVD GRAPHENE; LORENTZ MAGNETORESISTANCE; MAGNETO-TRANSPORT MEASUREMENT; NEGATIVE MAGNETO-RESISTANCE; NITROGEN-DOPING; TEMPERATURE DEPENDENCE; WEAK LOCALIZATION;

CHEMICAL VAPOR DEPOSITION;

EID: 84923388706     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5057063     Document Type: Article

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