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Volumn 13, Issue 10, 2013, Pages 4827-4832

Wide-gap semiconducting graphene from nitrogen-seeded SiC

Author keywords

dopants; Graphene; graphite; graphite thin film; SiC; silicon carbide

Indexed keywords

DOPING (ADDITIVES); ENERGY GAP; GRAPHITE; NITROGEN; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS;

EID: 84885444139     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl402544n     Document Type: Article
Times cited : (37)

References (44)
  • 13
    • 84885438432 scopus 로고    scopus 로고
    • Baringhaus, J.; Tegenkamp, C.; Edler, F.; Ruan, M.; Conrad, E.; Berger, C.; de Heer, W. A. arXiv:1301.5354, 2013
    • Baringhaus, J.; Tegenkamp, C.; Edler, F.; Ruan, M.; Conrad, E.; Berger, C.; de Heer, W. A. arXiv:1301.5354, 2013.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.