Chemical vapor deposition of N-doped graphene and carbon films: The role of precursors and gas phase

ACS Nano

Volumn 8, Issue 4, 2014, Pages 3337-3346

  Ito, Yoshikazu ^a   Christodoulou, Christos ^b   Nardi, Marco Vittorio ^b   Koch, Norbert ^b   Sachdev, Hermann ^a   Müllen, Klaus ^a  

^a MAX PLANCK INSTITUTE FOR POLYMER RESEARCH   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

Author keywords

CVD; formation mechanism; graphene; N doping; precursor chemistry; Raman spectroscopy

Indexed keywords

CARBON FILMS; DOPING (ADDITIVES); FILM GROWTH; FUNCTIONAL GROUPS; GAS DYNAMICS; GRAPHENE; METHANE; NITROGEN; RAMAN SPECTROSCOPY; VAPORS;

AMINE FUNCTIONAL GROUPS; CHEMICAL VAPOR DEPOSITIONS (CVD); FORMATION MECHANISM; GAS PHASE COMPOSITION; N-DOPING; NITROGEN-DOPED GRAPHENE; PRECURSOR CHEMISTRY; THERMODYNAMIC EFFECT;

CHEMICAL VAPOR DEPOSITION;

EID: 84899427335     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn405661b     Document Type: Article

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