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Volumn 4, Issue , 2014, Pages

Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators

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EID: 84923286516     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep04683     Document Type: Article
Times cited : (58)

References (32)
  • 2
    • 19744378261 scopus 로고    scopus 로고
    • Micrometre-scale silicon electrooptic modulator
    • Xu, Q., Schmidt, B., Pradhan, S. & Lipson, M. Micrometre-scale silicon electrooptic modulator. Nature 435, 325-327 (2005).
    • (2005) Nature , vol.435 , pp. 325-327
    • Xu, Q.1    Schmidt, B.2    Pradhan, S.3    Lipson, M.4
  • 3
    • 37149010792 scopus 로고    scopus 로고
    • Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator
    • William, M. G., Michael, J. R., Lidija, S. & Yurii, A. V. Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator. Opt. Express 15, 17106-17113 (2007).
    • (2007) Opt. Express , vol.15 , pp. 17106-17113
    • William, M.G.1    Michael, J.R.2    Lidija, S.3    Yurii, A.V.4
  • 4
    • 84860203753 scopus 로고    scopus 로고
    • Compact and low power operation optical switch using silicon-germanium/silicon heterostructure waveguide
    • Sekiguchi, S., Kurahashi, T., Zhu, L., Kawaguchi, K. & Morito, K. Compact and low power operation optical switch using silicon-germanium/silicon heterostructure waveguide. Opt. Express 20, 17212-17219 (2012).
    • (2012) Opt. Express , vol.20 , pp. 17212-17219
    • Sekiguchi, S.1    Kurahashi, T.2    Zhu, L.3    Kawaguchi, K.4    Morito, K.5
  • 5
    • 85008052561 scopus 로고    scopus 로고
    • CMOS Photonics for high-speed interconnects
    • Gunn, C. CMOS Photonics for high-speed interconnects. IEEE Comput. Soc., 26, 58-66 (2006).
    • (2006) IEEE Comput. Soc. , vol.26 , pp. 58-66
    • Gunn, C.1
  • 6
    • 35448972816 scopus 로고    scopus 로고
    • 40 Gbit/s silicon optical modulator for high-speed applications
    • Liao, L. et al. 40 Gbit/s silicon optical modulator for high-speed applications. Electron. Lett. 43 (2007).
    • (2007) Electron. Lett. , vol.43
    • Liao, L.1
  • 7
    • 79958181390 scopus 로고    scopus 로고
    • 40 Gb/s silicon photonics modulator for TE and TM polarisations
    • Gardes, F. Y., Thomson, D. J., Emerson, N. G. & Reed, G. T. 40 Gb/s silicon photonics modulator for TE and TM polarisations. Opt. Express 19, 11804-11814 (2011).
    • (2011) Opt. Express , vol.19 , pp. 11804-11814
    • Gardes, F.Y.1    Thomson, D.J.2    Emerson, N.G.3    Reed, G.T.4
  • 8
    • 1342346714 scopus 로고    scopus 로고
    • A high-speed silicon optical modulator based on a metal-oxidesemiconductor capacitor
    • Liu, A. et al. A high-speed silicon optical modulator based on a metal-oxidesemiconductor capacitor. Nature 427, 615-618 (2004).
    • (2004) Nature , vol.427 , pp. 615-618
    • Liu, A.1
  • 9
    • 21244477171 scopus 로고    scopus 로고
    • High speed silicon Mach-Zehnder modulator
    • Liao, L. et al. High speed silicon Mach-Zehnder modulator. Opt. Express 13, 3129-3135 (2005).
    • (2005) Opt. Express , vol.13 , pp. 3129-3135
    • Liao, L.1
  • 10
    • 13444282485 scopus 로고    scopus 로고
    • Phase modulation efficiency and transmission loss of silicon optical phase shifters
    • Liao, L. et al. Phase modulation efficiency and transmission loss of silicon optical phase shifters. IEEE J. Sel. Top. Quantum Electron. 41, 250-257 (2005).
    • (2005) IEEE J. Sel. Top. Quantum Electron. , vol.41 , pp. 250-257
    • Liao, L.1
  • 11
    • 77952858364 scopus 로고    scopus 로고
    • Wavelength-tunable silicon microring modulator
    • Dong, P. et al. Wavelength-tunable silicon microring modulator. Opt. Express 18, 10941-10946 (2010).
    • (2010) Opt. Express , vol.18 , pp. 10941-10946
    • Dong, P.1
  • 12
    • 84856300470 scopus 로고    scopus 로고
    • Photonic crystal silicon optical modulators: Carrier-injection and depletion at 10 Gb/s
    • Nguyen, H. C., Sakai, Y., Shinkawa, M., Ishikura, N. & Baba, T. Photonic crystal silicon optical modulators: carrier-injection and depletion at 10 Gb/s. IEEE J. Quantum Electron. 48, 210-220 (2012).
    • (2012) IEEE J. Quantum Electron. , vol.48 , pp. 210-220
    • Nguyen, H.C.1    Sakai, Y.2    Shinkawa, M.3    Ishikura, N.4    Baba, T.5
  • 13
    • 48849098001 scopus 로고    scopus 로고
    • Slow light in photonic crystals
    • Baba, T. Slow light in photonic crystals. Nature Photon. 2, 465-473 (2008).
    • (2008) Nature Photon. , vol.2 , pp. 465-473
    • Baba, T.1
  • 14
    • 85008539524 scopus 로고    scopus 로고
    • Strain engineering of plasma dispersion effect for SiGe optical modulators
    • Takenaka, M. & Takagi, S. Strain engineering of plasma dispersion effect for SiGe optical modulators. IEEE J. Sel. Top. Quantum Electron. 48, 8-15 (2012).
    • (2012) IEEE J. Sel. Top. Quantum Electron. , vol.48 , pp. 8-15
    • Takenaka, M.1    Takagi, S.2
  • 15
    • 0037074814 scopus 로고    scopus 로고
    • Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs
    • Takagi, S., Sugiyama, N., Mizuno, T., Tezuka, T. & Kurobe, A. Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs. Mater. Sci. and Eng. B 89, 426-434 (2002).
    • (2002) Mater. Sci. and Eng. B , vol.89 , pp. 426-434
    • Takagi, S.1    Sugiyama, N.2    Mizuno, T.3    Tezuka, T.4    Kurobe, A.5
  • 16
    • 0038417865 scopus 로고    scopus 로고
    • Strained Si CMOS (SS CMOS) technology: Opportunities and challenges
    • Rim, K. et al. Strained Si CMOS (SS CMOS) technology: opportunities and challenges. Solid-State Electron. 47, 1133-1139 (2003).
    • (2003) Solid-State Electron. , vol.47 , pp. 1133-1139
    • Rim, K.1
  • 17
  • 18
    • 84987070905 scopus 로고
    • Infrared modulation and energy band parameters in multivalley semiconductors through uniaxial stress dependence of free carrier contribution to optical constants
    • Walton, A. K. Infrared modulation and energy band parameters in multivalley semiconductors through uniaxial stress dependence of free carrier contribution to optical constants. Phys. Status Solidi. (B) 43, 379-386 (1971).
    • (1971) Phys. Status Solidi. (B) , vol.43 , pp. 379-386
    • Walton, A.K.1
  • 19
    • 36149045367 scopus 로고
    • Free-carrier absorption at low temperatures in uniaxially stressed n-type Ge, Si and GaAs
    • Walton, A. K. & Metcalfe, S. F. Free-carrier absorption at low temperatures in uniaxially stressed n-type Ge, Si and GaAs. Solid State Phys. 9, 3605-3625 (1976).
    • (1976) Solid State Phys. , vol.9 , pp. 3605-3625
    • Walton, A.K.1    Metcalfe, S.F.2
  • 21
    • 5444275992 scopus 로고    scopus 로고
    • Si/SiGe Heterostructures: From Material and Physics to Devices and Circuits
    • Douglas, J. P. Si/SiGe heterostructures: from material and physics to devices and circuits. Semicond. Sci. Technol. 19, R75-R108 (2004).
    • (2004) Semicond. Sci. Technol. , vol.19 , pp. R75-R108
    • Douglas, J.P.1
  • 22
    • 21544464728 scopus 로고
    • Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures
    • People, R. & Bean, J. C. Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures. Appl. Phys. Lett. 47, 322-324 (1985).
    • (1985) Appl. Phys. Lett. , vol.47 , pp. 322-324
    • People, R.1    Bean, J.C.2
  • 23
    • 0043210202 scopus 로고
    • Motion of electrons and holes in perturbed periodic fields
    • Luttinger, J. M. & Kohn,W. Motion of electrons and holes in perturbed periodic fields. Phys. Rev. 97, 869-883 (1955).
    • (1955) Phys. Rev. , vol.97 , pp. 869-883
    • Luttinger, J.M.1    Kohn, W.2
  • 24
    • 36149026177 scopus 로고
    • Quantum theory of cyclotron resonance in semiconductors: General theory
    • Luttinger, J. M. Quantum theory of cyclotron resonance in semiconductors: general theory. Phys. Rev. 102, 1030-1041 (1956).
    • (1956) Phys. Rev. , vol.102 , pp. 1030-1041
    • Luttinger, J.M.1
  • 25
    • 0001199458 scopus 로고
    • Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells
    • Chao, C. Y. P. & Chuang, S. L. Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells. Phys. Rev. B 46, 4110-4122 (1992).
    • (1992) Phys. Rev. B , vol.46 , pp. 4110-4122
    • Chao, C.Y.P.1    Chuang, S.L.2
  • 26
    • 84923289658 scopus 로고
    • Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates
    • Martin,M. R. &Vogl, P. Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates. Phys. Rev. B 48, 276-287 (1992).
    • (1992) Phys. Rev. B , vol.48 , pp. 276-287
    • Martin, M.R.1    Vogl, P.2
  • 28
    • 33846513913 scopus 로고    scopus 로고
    • Lipson M. 12. 5 Gbit/s carrierinjection-based silicon micro-ring silicon modulators
    • Xu,Q. F., Manipatruni, S., Schmidt, B., Shakya, J. &Lipson, M. 12. 5 Gbit/s carrierinjection-based silicon micro-ring silicon modulators. Opt. Express 15, 430-436 (2007).
    • (2007) Opt. Express , vol.15 , pp. 430-436
    • Xu, Q.F.1    Manipatruni, S.2    Schmidt, B.3    Shakya, J.4
  • 29
    • 84856505226 scopus 로고    scopus 로고
    • 12. 5-Gb/s operation with 0. 29-V. Cm v pi L using silicon Mach-Zehnder modulator based-on forward-biased pin diode
    • Akiyama, S. et al. 12. 5-Gb/s operation with 0. 29-V. cm V pi L using silicon Mach-Zehnder modulator based-on forward-biased pin diode. Opt. Express 20, 2911-2923 (2012).
    • (2012) Opt. Express , vol.20 , pp. 2911-2923
    • Akiyama, S.1
  • 30
    • 0020089607 scopus 로고
    • Modeling and measurement of minority-carrier lifetime versus doping in diffused layers of n1-p silicon diodes
    • Roulston, D. J., Arora, N. D. & Chamberlain, S. G. Modeling and measurement of minority-carrier lifetime versus doping in diffused layers of n1-p silicon diodes. IEEE Trans. Electron Devices ED-29, 180-187 (1982).
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 180-187
    • Roulston, D.J.1    Arora, N.D.2    Chamberlain, S.G.3
  • 31
    • 42149147367 scopus 로고    scopus 로고
    • Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators
    • Gui-Rong, Z. et al. Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators. Opt. Express 16, 5218-5226 (2008).
    • (2008) Opt. Express , vol.16 , pp. 5218-5226
    • Gui-Rong, Z.1
  • 32
    • 77952863364 scopus 로고    scopus 로고
    • Influence of carrier lifetime on performance of silicon p-i-n variable optical attenuators fabricated on submicrometer rib waveguides
    • Park, S. et al. Influence of carrier lifetime on performance of silicon p-i-n variable optical attenuators fabricated on submicrometer rib waveguides. Opt. Express 18, 11282-11291 (2010).
    • (2010) Opt. Express , vol.18 , pp. 11282-11291
    • Park, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.