Strain Engineering of Plasma Dispersion Effect for SiGe Optical Modulators

IEEE Journal of Quantum Electronics

Volumn 48, Issue 1, 2012, Pages 8-16

  Takenaka, Mitsuru ^a,b   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

High k dielectric; metal oxide semiconductor; optical modulator; Si photonics; SiGe quantum well; strain engineering

Indexed keywords

EID: 85008539524     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/JQE.2011.2176104     Document Type: Article

References (37)

1. G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photon., vol. 4, pp. 518–526, Jul. 2010.
2. A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature, vol. 427, pp. 615–618, Feb. 2004.
3. J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photon., vol. 2, pp. 433–437, May 2008.
4. Y. H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature, vol. 437, pp. 1334–1336, Oct. 2005.
5. R. A. Soref and B. R. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron., vol. 23, no. 1, pp. 123–129, Jan. 1987.
6. C. Gunn, “CMOS photonics for high-speed interconnects,” IEEE Micro, vol. 26, no. 2, pp. 58–66, Mar. -Apr. 2006.
7. A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Exp., vol. 15, no. 2, pp. 660–668, 2007.
8. L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett., vol. 43, no. 22, pp. 1196–1197, Oct. 2007.
9. N. N. Feng, S. Liao, D. Feng, P. Dong, D. Zheng, H. Liang, R. Shafiiha, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High speed carrier-depletion modulators with 1. 4V-cm Vn L integrated on 0. 25 μm silicon-on-insulator waveguides,” Opt. Exp., vol. 18, no. 8, pp. 7994–7999, 2010.
10. M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact depletion-mode, silicon Mach-Zehnder modulator,” IEEE J. Select. Topics Quantum Electron., vol. 16, no. 1, pp. 159–164, Jan. -Feb. 2010.
11. F. Y. Gardes, D. J. Thomson, N. G. Emerson, and G. T. Reed, “40 Gb/s silicon photonics modulator for TE and TM polarizations,” Opt. Exp., vol. 19, no. 12, pp. 11804–11814, 2011.
12. L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. D. Keil, and T. Franck, “High speed silicon Mach-Zehnder modulator,” Opt. Exp., vol. 13, no. 8, pp. 3129–3135, Apr. 2005.
13. L. Liao, A. Liu, R. Jones, D. Rubin, D. Samara-Rubio, O. Cohen, M. Salib, and M. Paniccia, “Phase modulation efficiency and transmission loss of silicon optical phase shifters,” IEEE J. Quantum Electron., vol. 41, no. 2, pp. 250–257, Feb. 2005.
14. X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, A. Mekis, G. Li, J. Shi, P. Amberg, N. Pinckney, K. Raj, R. Ho, J. E. Cunningham, and A. Krishnamoorthy, “Ultralow-energy all-CMOS modulator integrated with driver,” Opt. Exp., vol. 18, no. 3, pp. 3059–3070, Feb. 2010.
15. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature, vol. 435, pp. 325–327, May 2005.
16. Q. Xu, S. Manipartruni, B. Schmidt, J. Shakya, and M. Lipson, “12. 5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators,” Opt. Exp., vol. 15, no. 2, pp. 430–436, Jan. 2007.
17. W. M. Green, M. J. Rooks, L. Sekaric, and Y. A. Vlasov, “Ultracompact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator,” Opt. Exp., vol. 15, no. 25, pp. 17106–17113, 2007.
18. R. People and J. C. Bean, “Calculation of critical layer thickness versus lattice mismatch for Gex Si1_x/Si strained-layer heterostructures,” Appl. Phys. Lett., vol. 47, no. 3, pp. 322–324, Aug. 1985.
19. M. M. Rieger and P. Vogl, “Electronic-band parameters in strained Si1-x Gex alloys on Si1_y Gey substrates,” Phys. Rev. B, vol. 48, no. 19, pp. 14276–14287, 1993.
20. J. M. Luttinger and W. Kohn, “Motion of electrons and holes in perturbed periodic fields,” Phys. Rev., vol. 97, no. 4, pp. 869–883, 1955.
21. J. M. Luttinger, “Quantum theory of cyclotron resonance in semiconductors: General theory,” Phys. Rev., vol. 102, no. 4, pp. 1030–1041, 1956.
22. C. Y. P. Chao and S. L. Chuang, “Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells,” Phys. Rev. B, vol. 46, no. 7, pp. 4110–4122, 1992.
23. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors. New York: Springer-Verlag, 1995.
24. Y. Shiraki and N. Usami, Silicon-Germanium (SiGe) Nanostructures. Cambridge, U. K.: Woodhead Publishing, 2011.
25. M. V. Fischetti and S. E. Laux, “Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys,” J. Appl. Phys., vol. 80, no. 4, pp. 2234–2252, 1996.
26. J. P. Dismukes, L. Ekstrom, and R. J. Paff, “Lattice parameter and density in germanium silicon alloys,” J. Phys. Chem., vol. 68, no. 10, pp. 3021–3027, 1964.
27. B. R. Bennett, R. A. Soref, and J. A. D. Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron., vol. 26, no. 1, pp. 113–122, Jan. 1990.
28. T. Manku, J. M. McGregor, A. Nathan, D. J. Roulston, J. P. Noel, and D. C. Houghton, “Drift hole mobility in strained and unstrained doped Si1_xGex alloys,” IEEE Trans. Electron. Dev., vol. 40, no. 11, pp. 1990–1996, Nov. 1993.
29. N. D. Arora, J. R. Hauser, and D. J. Roulston, “Electron and hole mobilities in silicon as a function of concentration and temperature,” IEEE Trans. Electron. Dev., vol. 29, no. 2, pp. 292–295, Feb. 1982.
30. D. V. Lang, R. People, J. C. Bean, and A. M. Sergent, “Measurement of the band gap of Gex Si1_x/Si strained-layer heterostructures,” Appl. Phys. Lett., vol. 47, no. 12, pp. 1333–1335, Dec. 1985.
31. D. J. Robbins, L. T. Canham, S. J. Barnett, A. D. Pitt, and P. Calcott, “Near-band-gap photoluminescence from pseudomorphic Si1_x Gex single layers on silicon,” J. Appl. Phys., vol. 71, no. 3, pp. 1407–1414, Feb. 1992.
32. F. Schaffler, Properties of Advanced Semiconductor Materials GaN, AIN, InN, BN, SiC, SiGe. New York: Wiley, 2001.
33. L. Manchanda, M. L. Green, R. B. van Dover, M. D. Morris, A. Kerber, Y. Hu, J. P. Han, P. J. Silverman, T. W. Sorsch, G. Weber, V. Donnelly, K. Pelhos, F. Klemens, N. A. Ciampa, A. Kornblit, Y. O. Kim, J. E. Bower, D. Barr, E. Ferry, D. Jacobson, J. Eng, B. Busch, and H. Schulte, “Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications,” in Proc. Electron Dev. Meeting Tech. Dig. Int., San Francisco, CA, 2000, pp. 23–26.
34. G. Hellings, L. Witters, R. Krom, J. Mitard, A. Hikavyy, R. Loo, A. Schulze, G. Eneman, C. Kerner, J. Franco, T. Chiarella, S. Takeoka, J. Tseng, W. Wang, W. Vandervorst, P. Absil, S. Biesemans, M. Heyns, K. De Meyer, M. Meuris, and T. Hoffmann, “Implant-free SiGe quantum well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel,” in Proc. IEEE Electron Dev. Meeting Int. Tech. Dig., San Francisco, CA, 2010, pp. 10. 4-1-10. 4-4.
35. V. R. Almeida, Q. Xu, C. A. Barrios, and M. Lipson, “Guiding and confining light in void nanostructure,” Opt. Lett., vol. 29, no. 11, pp. 1209–1211, 2004.
36. K. Mistry, C. Allen, C. Auth, B. Beattie, D. Bergstrom, M. Bost, M. Brazier, M. Buehler, A. Cappellani, R. Chau, C. -H. Choi, G. Ding, K. Fischer, T. Ghani, R. Grover, W. Han, D. Hanken, M. Hattendorf, J. He, J. Hicks, R. Huessner, D. Ingerly, P. Jain, R. James, L. Jong, S. Joshi, C. Kenyon, K. Kuhn, K. Lee, H. Liu, J. Maiz, B. McIntyre, P. Moon, J. Neirynck, S. Pae, C. Parker, D. Parsons, C. Prasad, L. Pipes, M. Prince, P. Ranade, T. Reynolds, J. Sandford, L. Shifren, J. Sebastian, J. Seiple, D. Simon, S. Sivakumar, P. Smith, C. Thomas, T. Troeger, P. Vandervoorn, S. Williams, and K. Zawadzki, “A 45 nm logic technology with high-k+ metal gate transistors, strained silicon, 9 Cu interconnect layers, 193 nm dry patterning, and 100% Pb-free Packing,” in Proc. IEEE Electron Dev. Meeting Int. Tech. Dig., Dec. 2007, pp. 247–250.
37. J. Fujikata, J. Ushida, Y. Ming-Bin, Z. S. Yang, D. Liang, P. L. Guo-Qiang, D. L. Kwong, and T. Nakamura, “25 GHz operation of silicon optical modulator with projection MOS structure,” in Proc. Collocated Nat. Fiber Opt. Eng. Conf. Opt. Fiber Commu., San Diego, CA, 2010, pp. 1–3.