Influence of carrier lifetime on performance of silicon p-i-n variable optical attenuators fabricated on submicrometer rib waveguides

Optics Express

Volumn 18, Issue 11, 2010, Pages 11282-11291

  Park, Sungbong ^a   Yamada, Koji ^a   Tsuchizawa, Tai ^a   Watanabe, Toshifumi ^a   Shinojima, Hiroyuki ^a   Nishi, Hidetaka ^a   Kou, Rai ^a   Itabashi, Sei Ichi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC ATTENUATORS; ELECTROMAGNETIC WAVE ATTENUATION; PULSED LASER APPLICATIONS; SURFACE DEFECTS; WAVEGUIDES;

AUGER RECOMBINATION; LATTICE DEFECTS; LINEARLY PROPORTIONAL; NORMAL INCIDENCE; PICOSECOND LASER PULSE; PULSE RESPONSE; RESPONSE SPEED; RIB WAVEGUIDES; SUBMICROMETERS; SURFACE RECOMBINATIONS; VARIABLE OPTICAL ATTENUATORS;

CARRIER LIFETIME;

ARTICLE; COMPUTER AIDED DESIGN; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; REFRACTOMETRY; REPRODUCIBILITY; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY;

COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; REFRACTOMETRY; REPRODUCIBILITY OF RESULTS; SEMICONDUCTORS; SENSITIVITY AND SPECIFICITY;

EID: 77952863364     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.011282     Document Type: Article

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