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Volumn 3, Issue 8, 2015, Pages 1830-1834

Room temperature ferromagnetism in (Ga1-xMnx)2O3 epitaxial thin films

(12) Guo, Daoyou a Wu, Zhenping a An, Yuehua a Li, Xiaojiang d Guo, Xuncai a Chu, Xulong a Sun, Changlong a Lei, Ming a Li, Linghong e Cao, Lixin c Li, Peigang a,b Tang, Weihua a

a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS (China)

b ZHEJIANG SCI TECH UNIVERSITY (China)

c INSTITUTE OF PHYSICS (China)

d SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

e STATE UNIVERSITY OF NEW YORK AT POTSDAM (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ENERGY GAP; FERROMAGNETISM; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; THIN FILMS;

EPITAXIAL THIN FILMS; EPITAXIALLY GROWN; LASER MOLECULAR BEAM EPITAXY; MN CONTENT; MN-DOPED; ROOM TEMPERATURE; ROOM TEMPERATURE FERROMAGNETISM; SPINTRONIC DEVICE;

MANGANESE;

EID: 84923205241 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c4tc02833c Document Type: Article

Times cited : (87)

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