The important role of Mn 3+ in the room-temperature ferromagnetism of Mn-doped GaN films

Applied Surface Science

Volumn 258, Issue 1, 2011, Pages 525-529

  Hu, B ^a   Man, B Y ^a   Yang, C ^a   Liu, M ^a   Chen, C S ^a   Gao, X G ^a   Xu, S C ^a   Wang, C C ^a   Sun, Z C ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Annealing temperature; BMP; Gallium manganese nitride; Laser assisted molecular beam epitaxy; Mn valence; Room temperature ferromagnetism

Indexed keywords

ANNEALING; BINARY ALLOYS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM NITRIDE; III-V SEMICONDUCTORS; METAL ANALYSIS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOCRYSTALS; POLARONS; SAPPHIRE; ZINC SULFIDE;

ANNEALING TEMPERATURES; GALLIUM MANGANESE NITRIDE; LASER-ASSISTED; MN VALENCES; ROOM TEMPERATURE FERROMAGNETISM;

MANGANESE COMPOUNDS;

EID: 80054731091     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.08.075     Document Type: Article

References (20)

1. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand Science 287 2000 1019
2. M. Aoki, H. Yamane, M. Shimada, S. Sarayama, H. Iwata, and F.J. Disalvo Jpn. J. Appl. Phys. Part 1 42 2003 5445
3. M.L. Reed, M.K. Ritums, H.H. Stadelmaier, M.J. Reed, C.A. Parker, S.M. Bedair, and N.A. El-Masry Mater. Lett. 51 2001 500
4. D. Chen, Z. Ding, S. Yao, W. Hua, K. Wang, and T. Chen Nucl. Instrum. Methods Phys. Res. B 266 2008 2797
5. S. Sonoda, S. Shimizu, and T. Sasaki J. Cryst. Growth 237-239 2002 1358
6. G.T. Thaler, M.E. Overberg, B. Gila, R. Frazier, C.R. Abernathy, S.J. Pearton, J.S. Lee, S.Y. Lee, Y.D. Park, Z.G. Khim, J. Kim, and F. Ren Appl. Phys. Lett. 80 2002 3964
7. L.M. Sandratskii, P. Bruno, and S. Mirbt Phys. Rev. B 71 2005 045210
8. J.M.D. Coey, M. Venkatesan, and C.B. Fitzgerald Nat. Mater. 4 2005 173
9. M.E. Overberg, C.R. Abernathy, S.J. Pearton, N.A. Theodoropoulou, K.T. McCarthy, and A.F. Hebard Appl. Phys. Lett. 79 2001 1312 1314
10. D. O'Mahony, F. McGee, M. Venkatesan, J.G. Lunne, and J.M.D. Coey Superlattices Microstruct. 36 2004 403 408
11. H.Z. Xi, B.Y. Man, C.S. Chen, M. Liu, J. Wei, and S.Y. Yang Semicond. Sci. Technol. 24 2009 085024
12. W. Gebicki, J. Strzeszewski, G. Kamler, T. Szyszko, and S. Podsiado Appl. Phys. Lett. 76 2000 3870
13. J.I. Hwang, Y. Ishida, M. Kobayashi, H. Hirata, K. Takubo, T. Mizokawa, A. Fujimori, J. Okamoto, K. Mamiya, Y. Saito, Y. Muramatsu, H. Ott, A. Tanaka, T. Kondo, and H. Munekata Phys. Rev. B 72 2005 085216
14. S.P. Kowalczyk, L. Ley, F.R. McFeely, and D.A. Shirley Phys. Rev. B 11 1975 1721
15. Chul Hwan Choi, and Seon Hyo Kim J. Magn. Magn. Mater. 321 2009 3833 3838
16. D.M.G. Leite, and J.H. Dias da Silva J. Phys. Condens. Matter 20 2008 055001
17. M. Girtan, and G. Folcher Surf. Coat. Technol. 172 2003 242
18. X.G. Cui, Z.K. Tao, R. Zhang, X. Li, X.Q. Xiu, Z.L. Xie, S.L. Gu, P. Han, Y. Shi, and Y.D. Zheng Appl. Phys. Lett. 92 2008 152116
19. S.J. Pearton, C.R. Abernathy, G.T. Thaler, R.M. Frazier, D.P. Norton, F. Ren, Y.D. Park, J.M. Zavada, I.A. Buyanova, W.M. Chen, and A.F. Hebard J. Phys. Condens. Matter 16 2004 R209 R245
20. Abdul Majid, Rehana Shrif, Akbar Ali, and J.J. Zhu Jpn. J. Appl. Phys. 48 2009 040202