Epitaxial growth of Mn-doped γ-Ga2O3 on spinel substrate

Journal of Materials Research

Volumn 26, Issue 4, 2011, Pages 578-583

  Hayashi, Hiroyuki ^a   Huang, Rong ^b,c   Oba, Fumiyasu ^a   Hirayama, Tsukasa ^b   Tanaka, Isao ^a,b  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN FINE CERAMICS CENTER   (Japan)

^c EAST CHINA NORMAL UNIVERSITY   (China)

Author keywords

Crystal growth; Epitaxy; Film

Indexed keywords

CRYSTAL QUALITIES; EPITAXIALLY GROWN; LASER ENERGY DENSITY; MN CONCENTRATIONS; MN-DOPED; OPTIMIZED CONDITIONS; PREPARATION CONDITIONS; ROCKING CURVES; ROOT MEAN SQUARE ROUGHNESS; SPINEL STRUCTURE; SUBSTRATE TEMPERATURE; TETRAGONAL DISTORTION; TETRAGONALITY;

CRYSTAL GROWTH; CURVE FITTING; DEPOSITION; EPITAXIAL GROWTH; FILM PREPARATION; GALLIUM; MANGANESE; PULSED LASER DEPOSITION; PULSED LASERS; X RAY DIFFRACTION;

SUBSTRATES;

EID: 80054922814     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2010.32     Document Type: Article

References (22)

1. T. Minami: Oxide thin-film electroluminescent devices and materials. Solid-State Electron. 47, 2237 (2003).
2. 3 single crystals. Appl. Phys. Lett. 70, 3561 (1997).
3. 3 thin films. Appl. Phys. Lett. 77, 4166 (2000).
4. 3 thin film at low deposition temperatures. Thin Solid Films 411, 134 (2002).
5. 3. Appl. Phys. Lett. 88, 092106 (2006).
6. 3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors. Jpn. J. Appl. Phys. 46, 7217 (2007).
7. 3 thin films for ultraviolet photodetectors. Appl. Phys. Lett. 90, 031912 (2007).
8. 3 thin film for oxygen sensor at high temperature. Appl. Surf. Sci. 175, 721 (2001).
9. 3 with spinel structure. Appl. Phys. Lett. 89, 181903 (2006).
10. 2O. J. Am. Chem. Soc. 74, 719 (1952).
11. 3 substrates by ultrasonic mist chemical vapor deposition. Jpn. J. Appl. Phys. 47, 7311 (2008).
12. 3 polymorphs. J. Phys. Condens. Matter 19, 346211 (2007).
13. 3 epitaxial film on sapphire (0001) with room temperature ferromagnetism. J. Appl. Phys. 101, 063526 (2007).
14. L. G. Parratt: Surface studies of solids by total reflection of x-rays. Phys. Rev. 95, 359 (1954).
15. T. Ohnishi, H. Koinuma, and M. Lippmaa: Pulsed laser deposition of oxide thin films. Appl. Surf. Sci. 252, 2466 (2006).
16. T. Ohnishi, M. Lippmaa, T. Yamamoto, S. Meguro, and H. Koinuma: Improved stoichiometry and misfit control in perov-skite thin film formation at a critical fluence by pulsed laser deposition. Appl. Phys. Lett. 87, 241919 (2005).
17. J. Hong, J. Bae, Z. L. Wang, and R. L. Snyder: Room-temperature, texture-controlled growth of ZnO thin films and their application for growing aligned ZnO nanowire arrays. Nanotech. 20, 085609 (2009).
18. 3. Z. Metallkd. 95, 9 (2004).
19. 4. J. Appl. Phys. 37, 960 (1966).
20. P. A. Langjahr, F. F. Lange, T. Wagner, and M. Rühle: Lattice mismatch accommodation in perovskite films on perovskite substrates. Acta Mater. 46, 773 (1998).
21. 3 interfaces. Acta Mater. 47, 183 (1998).
22. y epitaxial growth on MgO substrate: A first-principles study. J. Appl. Phys. 95, 2309 (2004).