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Journal of Materials Chemistry C

Volumn 2, Issue 34, 2014, Pages 7071-7076

CrXTe3 (X = Si, Ge) nanosheets: Two dimensional intrinsic ferromagnetic semiconductors

(2) Li, Xingxing a Yang, Jinlong a,b

a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; FERROMAGNETIC MATERIALS; GERMANIUM; MONTE CARLO METHODS; NANOSHEETS; SEMICONDUCTOR DOPING; SILICON;

CLASSICAL HEISENBERG MODEL; EXPERIMENTAL REALIZATIONS; FERROMAGNETIC ORDERINGS; FERROMAGNETIC SEMICONDUCTOR; FIRST-PRINCIPLES CALCULATION; FREE STANDING MEMBRANES; NUCLEOPHILIC MOLECULES; SPIN-POLARIZED CARRIER INJECTION;

FERROMAGNETISM;

EID: 84905717965 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c4tc01193g Document Type: Article

Times cited : (407)

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