SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 8, 2011, Pages

Defect-induced magnetism in neutron irradiated 6H-SiC single crystals

(9) Liu, Yu a Wang, Gang a Wang, Shunchong a Yang, Jianhui b Chen, Liang b Qin, Xiubo c Song, Bo d Wang, Baoyi c Chen, Xiaolong a

a INSTITUTE OF PHYSICS (China)

b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING (China)

c INSTITUTE OF HIGH ENERGY PHYSICS (China)

d HARBIN INSTITUTE OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT ENGINEERING; DEFECT STATE; DIVACANCIES; FIRST-PRINCIPLES CALCULATION; INDUCED MAGNETISM; LOCAL MOMENTS; SPIN COUPLINGS; WIDE-BAND-GAP SEMICONDUCTOR;

DEFECTS; MAGNETIC ANISOTROPY; MAGNETISM; SILICON CARBIDE;

SINGLE CRYSTALS;

EID: 79952099856 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.106.087205 Document Type: Article

Times cited : (170)

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