Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals

ACS Nano

Volumn 9, Issue 1, 2015, Pages 378-386

  Zhou, Shu ^a,b   Pi, Xiaodong ^a   Ni, Zhenyi ^a   Ding, Yi ^b   Jiang, Yingying ^a   Jin, Chuanhong ^a   Delerue, Christophe ^c   Yang, Deren ^a   Nozaki, Tomohiro ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

boron; localized surface plasmon resonance; nanocrystals; phosphorus; silicon

Indexed keywords

BORON; ELECTRONIC PROPERTIES; NANOCRYSTALS; PHOSPHORUS; PLASMONS; PRECIOUS METALS; RESONANCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SILICON; SURFACE PLASMON RESONANCE;

CARRIER EFFECTIVE MASS; COMPARATIVE STUDIES; DIELECTRIC SCREENING; LOCALIZED SURFACE PLASMON RESONANCE; MID-INFRARED REGIONS; PHOSPHORUS-DOPED; PLASMONIC COUPLING; QUALITY FACTORS;

SEMICONDUCTING SILICON;

EID: 84921776641     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn505416r     Document Type: Article

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