Controlled doping of silicon nanocrystals investigated by solution-processed field effect transistors

ACS Nano

Volumn 8, Issue 6, 2014, Pages 5650-5656

  Gresback, Ryan ^a   Kramer, Nicolaas J ^b   Ding, Yi ^a   Chen, Ting ^b   Kortshagen, Uwe R ^b   Nozaki, Tomohiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b University of Minnesota   (United States)

Author keywords

boron; dopants; field effect transistor; nanocrystal; phosphorus; silicon

Indexed keywords

BORON; CHEMICAL ACTIVATION; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; NANOCRYSTALS; PHOSPHORUS; SEMICONDUCTOR DOPING; SILICON; THIN FILMS;

BULK SILICON; DOPANT ACTIVATION; DOPED SILICON; ELECTRONIC ACTIVATION; SEMICONDUCTOR NANOCRYSTALS; SILICON NANOCRYSTALS; SOLUTION-PROCESSED; SURFACE DOPING;

FIELD EFFECT TRANSISTORS;

EID: 84903482348     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn500182b     Document Type: Article

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