Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis

Applied Physics Letters

Volumn 102, Issue 1, 2013, Pages

  Khelifi, Rim ^a   Mathiot, Daniel ^a   Gupta, Raghav ^a   Muller, Dominique ^a   Roussel, Manuel ^b   Duguay, Sébastien ^b  

^a UNIVERSITÉ DE STRASBOURG   (France)

^b UNIVERSITÉ DE ROUEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; ATOMIC SCALE; CO-IMPLANTATION; DOPANT DOSE; ION BEAM SYNTHESIS; MOS STRUCTURE; N-TYPE DOPING; PROJECTED RANGE; SI NANOCRYSTAL; THERMAL-ANNEALING;

DOPING (ADDITIVES); NANOCLUSTERS; NANOCRYSTALS; SILICON;

SEMICONDUCTING SILICON;

EID: 84872299643     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4774266     Document Type: Article

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