Tight-binding calculations of the optical response of optimally p-doped Si nanocrystals: A model for localized surface plasmon resonance

Physical Review Letters

Volumn 111, Issue 17, 2013, Pages

  Pi, Xiaodong ^a   Delerue, Christophe ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING CONCENTRATION; HYDROGENIC IMPURITIES; LOCALIZED SURFACE PLASMON RESONANCE; OPTICAL RESPONSE; RANDOM PHASE APPROXIMATIONS; SILICON NANOCRYSTALS; TIGHT-BINDING CALCULATIONS; VALENCE ELECTRON;

BINDING ENERGY; PHOSPHORUS; PLASMONS; SILICON;

SURFACE PLASMON RESONANCE;

NANOPARTICLE; PHOSPHORUS; SILICON;

CHEMISTRY; PROCEDURES; SURFACE PLASMON RESONANCE; THEORETICAL MODEL;

MODELS, THEORETICAL; NANOPARTICLES; PHOSPHORUS; SILICON; SURFACE PLASMON RESONANCE;

EID: 84886780111     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.111.177402     Document Type: Article

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