Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phosphorus-doped Czochralski silicon

Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

  Zeng, Yuheng ^a   Ma, Xiangyang ^a   Tian, Daxi ^a,b   Wang, Weiyan ^a   Gong, Longfei ^b   Yang, Deren ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b QL Electronics   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CZOCHRALSKI SILICON; FACE-CENTERED CUBIC; HETEROGENEOUS NUCLEUS; HIGH TEMPERATURE; LOW-HIGH; OXYGEN PRECIPITATES; OXYGEN PRECIPITATION; PHOSPHORUS-DOPED;

INTERNET PROTOCOLS; NUCLEATION; OXYGEN; PHOSPHORUS; PRECIPITATES; PRECIPITATION (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 67249158328     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3120943     Document Type: Article

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