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Volumn 10, Issue 12, 2010, Pages 4975-4980

Controllable N-doping of graphene

Author keywords

field effect transistor; Graphene; ion irradiation; N doping; NH3 annealing; Raman spectroscopy

Indexed keywords

BACK-GATE; DIRAC POINT; DOPANT ATOMS; ELECTRONIC APPLICATION; FLUENCES; GRAPHENES; IN-PLANE; ION IRRADIATION; MULTIPLE APPLICATIONS; N-DOPED; N-DOPING; NEGATIVE V; NH3 ANNEALING; P-TYPE; PHYSICAL MECHANISM; SOURCE-DRAIN;

EID: 78650144277     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl103079j     Document Type: Article
Times cited : (829)

References (43)
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    • Gong, J.-R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.