메뉴 건너뛰기




Volumn 48, Issue 1, 2015, Pages 111-118

Raman spectroscopy and in Situ Raman spectroelectrochemistry of isotopically engineered graphene systems

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84921416140     PISSN: 00014842     EISSN: 15204898     Source Type: Journal    
DOI: 10.1021/ar500384p     Document Type: Article
Times cited : (63)

References (46)
  • 3
    • 79955878629 scopus 로고    scopus 로고
    • Raman Spectroscopy and in Situ Raman Spectroelectrochemistry of Bilayer C-12/C-13 Graphene
    • Kalbac, M.; Farhat, H.; Kong, J.; Janda, P.; Kavan, L.; Dresselhaus, M. S. Raman Spectroscopy and in Situ Raman Spectroelectrochemistry of Bilayer C-12/C-13 Graphene. Nano Lett. 2011, 11, 1957-1963.
    • (2011) Nano Lett. , vol.11 , pp. 1957-1963
    • Kalbac, M.1    Farhat, H.2    Kong, J.3    Janda, P.4    Kavan, L.5    Dresselhaus, M.S.6
  • 4
    • 84865974120 scopus 로고    scopus 로고
    • Raman Spectroscopy as a Tool to Address Individual Graphene Layers in Few-Layer Graphene
    • Kalbac, M.; Kong, J.; Dresselhaus, M. S. Raman Spectroscopy as a Tool to Address Individual Graphene Layers in Few-Layer Graphene. J. Phys. Chem. C 2012, 116, 19046-19050.
    • (2012) J. Phys. Chem. C , vol.116 , pp. 19046-19050
    • Kalbac, M.1    Kong, J.2    Dresselhaus, M.S.3
  • 5
    • 78049342778 scopus 로고    scopus 로고
    • The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
    • Kalbac, M.; Reina-Cecco, A.; Farhat, H.; Kong, J.; Kavan, L.; Dresselhaus, M. S. The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene. ACS Nano 2010, 4, 6055-6063.
    • (2010) ACS Nano , vol.4 , pp. 6055-6063
    • Kalbac, M.1    Reina-Cecco, A.2    Farhat, H.3    Kong, J.4    Kavan, L.5    Dresselhaus, M.S.6
  • 7
    • 34247189037 scopus 로고    scopus 로고
    • Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
    • No. 166802
    • Yan, J.; Zhang, Y. B.; Kim, P.; Pinczuk, A. Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene. Phys. Rev. Lett. 2007, 98, No. 166802.
    • (2007) Phys. Rev. Lett. , vol.98
    • Yan, J.1    Zhang, Y.B.2    Kim, P.3    Pinczuk, A.4
  • 9
    • 84887119453 scopus 로고    scopus 로고
    • Mass-Related Inversion Symmetry Breaking and Phonon Self-Energy Renormalization in Isotopically Labeled AB-Stacked Bilayer Graphene
    • Araujo, P. T.; Frank, O.; Mafra, D. L.; Fang, W.; Kong, J.; Dresselhaus, M. S.; Kalbac, M. Mass-Related Inversion Symmetry Breaking and Phonon Self-Energy Renormalization in Isotopically Labeled AB-Stacked Bilayer Graphene. Sci. Rep 2013, 3, No. 2061.
    • (2013) Sci. Rep , vol.3 , Issue.2061
    • Araujo, P.T.1    Frank, O.2    Mafra, D.L.3    Fang, W.4    Kong, J.5    Dresselhaus, M.S.6    Kalbac, M.7
  • 11
    • 67651208275 scopus 로고    scopus 로고
    • Electrochemical Gate-Controlled Charge Transport in Graphene in Ionic Liquid and Aqueous Solution
    • Chen, F.; Qing, Q.; Xia, J.; Li, J.; Tao, N. Electrochemical Gate-Controlled Charge Transport in Graphene in Ionic Liquid and Aqueous Solution. J. Am. Chem. Soc. 2009, 131, 9908-9909.
    • (2009) J. Am. Chem. Soc. , vol.131 , pp. 9908-9909
    • Chen, F.1    Qing, Q.2    Xia, J.3    Li, J.4    Tao, N.5
  • 12
    • 57949083561 scopus 로고    scopus 로고
    • Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene
    • No. 257401
    • Malard, L. M.; Elias, D. C.; Alves, E. S.; Pimenta, M. A. Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene. Phys. Rev. Lett. 2008, 101, No. 257401.
    • (2008) Phys. Rev. Lett. , vol.101
    • Malard, L.M.1    Elias, D.C.2    Alves, E.S.3    Pimenta, M.A.4
  • 13
    • 77955231284 scopus 로고    scopus 로고
    • Graphene Transistors
    • Schwierz, F. Graphene Transistors. Nat. Nanotechnol 2010, 5, 487-496.
    • (2010) Nat. Nanotechnol , vol.5 , pp. 487-496
    • Schwierz, F.1
  • 14
    • 84894413278 scopus 로고    scopus 로고
    • Extreme Electrochemical Doping of a Graphene-Polyelectrolyte Heterostructure
    • Kominkova, Z.; Kalbac, M. Extreme Electrochemical Doping of a Graphene-Polyelectrolyte Heterostructure. RSC Adv. 2014, 4, 11311-11316.
    • (2014) RSC Adv. , vol.4 , pp. 11311-11316
    • Kominkova, Z.1    Kalbac, M.2
  • 15
    • 84889082444 scopus 로고    scopus 로고
    • Raman Spectroscopy of Strongly Doped CVD-Graphene
    • Komínková, Z.; Kalbáč, M. Raman Spectroscopy of Strongly Doped CVD-Graphene. Phys. Status Solidi B 2013, 250, 2659-2661.
    • (2013) Phys. Status Solidi B , vol.250 , pp. 2659-2661
    • Komínková, Z.1    Kalbáč, M.2
  • 16
    • 34249699048 scopus 로고    scopus 로고
    • Spectroelectrochemistry of Carbon Nanostructures
    • Kavan, L.; Dunsch, L. Spectroelectrochemistry of Carbon Nanostructures. ChemPhysChem 2007, 8, 975-998.
    • (2007) ChemPhysChem , vol.8 , pp. 975-998
    • Kavan, L.1    Dunsch, L.2
  • 17
    • 33846382747 scopus 로고    scopus 로고
    • Comment on "Determination of the Exciton Binding Energy in Single-Walled Carbon Nanotubes"
    • No. 019701
    • Kavan, L.; Kalbáč, M.; Zukalová, M.; Dunsch, L. Comment on "Determination of the Exciton Binding Energy in Single-Walled Carbon Nanotubes". Phys. Rev. Lett. 2007, 98, No. 019701.
    • (2007) Phys. Rev. Lett. , vol.98
    • Kavan, L.1    Kalbáč, M.2    Zukalová, M.3    Dunsch, L.4
  • 20
    • 0034429029 scopus 로고    scopus 로고
    • Double Resonant Raman Scattering in Graphite
    • Thomsen, C.; Reich, S. Double Resonant Raman Scattering in Graphite. Phys. Rev. Lett. 2000, 85, 5214-5217.
    • (2000) Phys. Rev. Lett. , vol.85 , pp. 5214-5217
    • Thomsen, C.1    Reich, S.2
  • 21
    • 84876373110 scopus 로고    scopus 로고
    • Raman Spectroscopy As a Versatile Tool for Studying the Properties of Graphene
    • Ferrari, A. C.; Basko, D. M. Raman Spectroscopy As a Versatile Tool for Studying the Properties of Graphene. Nat. Nanotechnol 2013, 8, 235-246.
    • (2013) Nat. Nanotechnol , vol.8 , pp. 235-246
    • Ferrari, A.C.1    Basko, D.M.2
  • 22
    • 84904768419 scopus 로고    scopus 로고
    • Doping Dependence of the Raman Spectrum of Defected Graphene
    • Bruna, M.; Ott, A. K.; Ijäs, M.; Yoon, D.; Sassi, U.; Ferrari, A. C. Doping Dependence of the Raman Spectrum of Defected Graphene. ACS Nano 2014, 8, 7432-7441.
    • (2014) ACS Nano , vol.8 , pp. 7432-7441
    • Bruna, M.1    Ott, A.K.2    Ijäs, M.3    Yoon, D.4    Sassi, U.5    Ferrari, A.C.6
  • 24
    • 84889091754 scopus 로고    scopus 로고
    • In Situ Raman Spectroelectrochemistry of Graphene Oxide
    • Bouša, M.; Frank, O.; Jirka, I.; Kavan, L. In Situ Raman Spectroelectrochemistry of Graphene Oxide. Phys. Status Solidi B 2013, 250, 2662-2667.
    • (2013) Phys. Status Solidi B , vol.250 , pp. 2662-2667
    • Bouša, M.1    Frank, O.2    Jirka, I.3    Kavan, L.4
  • 25
    • 60749107706 scopus 로고    scopus 로고
    • Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition
    • Reina, A.; Jia, X.; Ho, J.; Nezich, D.; Son, H.; Bulovic, V.; Dresselhaus, M. S.; Kong, J. Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition. Nano Lett. 2009, 9, 30-35.
    • (2009) Nano Lett. , vol.9 , pp. 30-35
    • Reina, A.1    Jia, X.2    Ho, J.3    Nezich, D.4    Son, H.5    Bulovic, V.6    Dresselhaus, M.S.7    Kong, J.8
  • 26
    • 84876016834 scopus 로고    scopus 로고
    • Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor Deposition
    • Chen, S.; Ji, H.; Chou, H.; Li, Q.; Li, H.; Suk, J. W.; Piner, R.; Liao, L.; Cai, W.; Ruoff, R. S. Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor Deposition. Adv. Mater. 2013, 25, 2062-2065.
    • (2013) Adv. Mater. , vol.25 , pp. 2062-2065
    • Chen, S.1    Ji, H.2    Chou, H.3    Li, Q.4    Li, H.5    Suk, J.W.6    Piner, R.7    Liao, L.8    Cai, W.9    Ruoff, R.S.10
  • 27
    • 84901817155 scopus 로고    scopus 로고
    • Carbon Isotope Labelling in Graphene Research
    • Frank, O.; Kavan, L.; Kalbac, M. Carbon Isotope Labelling in Graphene Research. Nanoscale 2014, 6, 6363-6370.
    • (2014) Nanoscale , vol.6 , pp. 6363-6370
    • Frank, O.1    Kavan, L.2    Kalbac, M.3
  • 28
    • 33846352893 scopus 로고    scopus 로고
    • Nonadiabatic Kohn Anomaly in a Doped Graphene Monolayer
    • No. 266407
    • Lazzeri, M.; Mauri, F. Nonadiabatic Kohn Anomaly in a Doped Graphene Monolayer. Phys. Rev. Lett. 2006, 97, No. 266407.
    • (2006) Phys. Rev. Lett. , vol.97
    • Lazzeri, M.1    Mauri, F.2
  • 29
    • 0036267495 scopus 로고    scopus 로고
    • Intercalation Compounds of Graphite
    • Dresselhaus, M. S.; Dresselhaus, G. Intercalation Compounds of Graphite. Adv. Phys. 2002, 51, 1-186.
    • (2002) Adv. Phys. , vol.51 , pp. 1-186
    • Dresselhaus, M.S.1    Dresselhaus, G.2
  • 31
    • 84891539127 scopus 로고    scopus 로고
    • Interaction between Graphene and Copper Substrate: The Role of Lattice Orientation
    • Frank, O.; Vejpravova, J.; Holy, V.; Kavan, L.; Kalbac, M. Interaction between Graphene and Copper Substrate: The Role of Lattice Orientation. Carbon 2014, 68, 440-451.
    • (2014) Carbon , vol.68 , pp. 440-451
    • Frank, O.1    Vejpravova, J.2    Holy, V.3    Kavan, L.4    Kalbac, M.5
  • 32
    • 84866088927 scopus 로고    scopus 로고
    • Optical Separation of Mechanical Strain from Charge Doping in Graphene
    • Lee, J. E.; Ahn, G.; Shim, J.; Lee, Y. S.; Ryu, S. Optical Separation of Mechanical Strain from Charge Doping in Graphene. Nat. Commun. 2012, 3, 1024.
    • (2012) Nat. Commun. , vol.3 , pp. 1024
    • Lee, J.E.1    Ahn, G.2    Shim, J.3    Lee, Y.S.4    Ryu, S.5
  • 33
    • 84888324369 scopus 로고    scopus 로고
    • Looking behind the Scenes: Raman Spectroscopy of Top-Gated Epitaxial Graphene through the Substrate
    • No. 113006
    • Fromm, F.; Wehrfritz, P.; Hundhausen, M.; Seyller, T. Looking behind the Scenes: Raman Spectroscopy of Top-Gated Epitaxial Graphene through the Substrate. New J. Phys. 2013, 15, No. 113006.
    • (2013) New J. Phys. , vol.15
    • Fromm, F.1    Wehrfritz, P.2    Hundhausen, M.3    Seyller, T.4
  • 35
    • 70350116947 scopus 로고    scopus 로고
    • Calculation of the Raman G Peak Intensity in Monolayer Graphene: Role of Ward Identities
    • No. 095011
    • Basko, D. M. Calculation of the Raman G Peak Intensity in Monolayer Graphene: Role of Ward Identities. New J. Phys. 2009, 11, No. 095011.
    • (2009) New J. Phys. , vol.11
    • Basko, D.M.1
  • 36
    • 77649176721 scopus 로고    scopus 로고
    • Electron-Electron Interactions and Doping Dependence of the Two-Phonon Raman Intensity in Graphene
    • No. 165413
    • Basko, D. M.; Piscanec, S.; Ferrari, A. C. Electron-Electron Interactions and Doping Dependence of the Two-Phonon Raman Intensity in Graphene. Phys. Rev. B 2009, 80, No. 165413.
    • (2009) Phys. Rev. B , vol.80
    • Basko, D.M.1    Piscanec, S.2    Ferrari, A.C.3
  • 40
    • 84890128550 scopus 로고    scopus 로고
    • Raman Spectroscopy of Twisted Bilayer Graphene
    • Jorio, A.; Canc¸ado, L. G. Raman Spectroscopy of Twisted Bilayer Graphene. Solid State Commun. 2013, 175-176, 3-12.
    • (2013) Solid State Commun. , vol.175-176 , pp. 3-12
    • Jorio, A.1    Canc¸ado, L.G.2
  • 43
    • 34347385641 scopus 로고    scopus 로고
    • Charge Distribution and Screening in Layered Graphene Systems
    • No. 235433
    • Guinea, F. Charge Distribution and Screening in Layered Graphene Systems. Phys. Rev. B 2007, 75, No. 235433.
    • (2007) Phys. Rev. B , vol.75
    • Guinea, F.1
  • 45
    • 84866687131 scopus 로고    scopus 로고
    • High-Yield Chemical Vapor Deposition Growth of High-Quality Large-Area AB-Stacked Bilayer Graphene
    • Liu, L.; Zhou, H.; Cheng, R.; Yu, W. J.; Liu, Y.; Chen, Y.; Shaw, J.; Zhong, X.; Huang, Y.; Duan, X. High-Yield Chemical Vapor Deposition Growth of High-Quality Large-Area AB-Stacked Bilayer Graphene. ACS Nano 2012, 6, 8241-8249.
    • (2012) ACS Nano , vol.6 , pp. 8241-8249
    • Liu, L.1    Zhou, H.2    Cheng, R.3    Yu, W.J.4    Liu, Y.5    Chen, Y.6    Shaw, J.7    Zhong, X.8    Huang, Y.9    Duan, X.10
  • 46
    • 84914811212 scopus 로고    scopus 로고
    • Growth of Adlayers Studied by Fluorination of Isotopically Engineered Graphene
    • Ek-Weis, J.; Costa, S. D.; Frank, O.; Kalbac, M. Growth of Adlayers Studied by Fluorination of Isotopically Engineered Graphene. Phys. Status Solidi B 2014, 251, 2505-2508.
    • (2014) Phys. Status Solidi B , vol.251 , pp. 2505-2508
    • Ek-Weis, J.1    Costa, S.D.2    Frank, O.3    Kalbac, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.