Gating electron-hole asymmetry in twisted bilayer graphene

ACS Nano

Volumn 8, Issue 7, 2014, Pages 6962-6969

  Yeh, Chao Hui ^a   Lin, Yung Chang ^a,b   Chen, Yu Chen ^a   Lu, Chun Chieh ^a   Liu, Zheng ^b   Suenaga, Kazu ^b   Chiu, Po Wen ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Raman; saddle points; twisted bilayer graphene; van Hove singularity

Indexed keywords

BAND STRUCTURE; ELECTRONS;

ELECTRON HOLE SYMMETRY; ELECTRON-HOLE ASYMMETRY; INELASTICALLY SCATTERED; INTERLAYER COUPLING; RAMAN; SADDLE POINT; TWISTED BILAYERS; VAN HOVE SINGULARITIES;

GRAPHENE;

EID: 84904740040     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn501775h     Document Type: Article

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