Raman spectroscopy and in situ raman spectroelectrochemistry of bilayer 12C/13C graphene

Nano Letters

Volumn 11, Issue 5, 2011, Pages 1957-1963

  Kalbac, Martin ^a,c   Farhat, Hootan ^b   Kong, Jing ^c   Janda, Pavel ^a   Kavan, Ladislav ^a   Dresselhaus, Mildred S ^c,d  

^a J HEYROVSKÝ INSTITUTE OF PHYSICAL CHEMISTRY   (Czech Republic)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c USA   (United States)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

bilayer; electrochemical charging; Graphene; Raman spectroscopy; spectroelectrochemistry

Indexed keywords

BI-LAYER; BOTTOM LAYERS; ELECTROCHEMICAL CHARGING; ELECTROCHEMICAL DOPING; ELECTRODE POTENTIALS; FREQUENCY SHIFT; G-MODES; GRAPHENE BAND; IN-SITU; RAMAN FREQUENCIES; RAMAN INTENSITIES; RAMAN MODES; SINGLE LAYER;

CARRIER CONCENTRATION; DOPING (ADDITIVES); RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; SPECTROELECTROCHEMISTRY;

GRAPHENE;

EID: 79955878629     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2001956     Document Type: Article

References (38)

1. Jung, N.; Kim, N.; Jockusch, S.; Turro, N. J.; Kim, P.; Brus, L. Charge Transfer Chemical Doping of Few Layer Graphenes: Charge Distribution and Band Gap Formation Nano Lett. 2009, 9 (12) 4133-4137
2. Das, A.; Pisana, S.; Chakraborty, B.; Piscanec, S.; Saha, S. K.; Waghmare, U. V.; Novoselov, K. S.; Krishnamurthy, H. R.; Geim, A. K.; Ferrari, A. C.; Sood, A. K. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor Nat. Nanotechnol. 2008, 3 (4) 210-215 (Pubitemid 351499403)
3. Basko, D. M.; Piscanec, S.; Ferrari, A. C. Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene Phys. Rev. B 2009, 80 (16) 165413
4. Freitag, M.; Steiner, M.; Martin, Y.; Perebeinos, V.; Chen, Z. H.; Tsang, J. C.; Avouris, P. Energy Dissipation in Graphene Field-Effect Transistors Nano Lett. 2009, 9 (5) 1883-1888
5. Malard, L. M.; Pimenta, M. A.; Dresselhaus, G.; Dresselhaus, M. S. Raman spectroscopy in graphene Phys. Rep. 2009, 473 (5-6) 51-87
6. Yan, J.; Zhang, Y. B.; Kim, P.; Pinczuk, A. Electric field effect tuning of electron-phonon coupling in graphene Phys. Rev. Lett. 2007, 98 (16) 166802
7. Zhu, J.; Jhaveri, R.; Woo, J. C. S. The effect of traps on the performance of graphene field-effect transistors Appl. Phys. Lett. 2010, 96 (19) 193503
8. Kavan, L.; Kalbac, M.; Zukalova, M.; Dunsch, L. Comment on "Determination of the exciton binding energy in single-walled carbon nanotubes Phys. Rev. Lett. 2007, 98 (1) 019701
9. Ferrari, A. C.; Meyer, J. C.; Scardaci, V.; Casiraghi, C.; Lazzeri, M.; Mauri, F.; Piscanec, S.; Jiang, D.; Novoselov, K. S.; Roth, S.; Geim, A. K. Raman spectrum of graphene and graphene layers Phys. Rev. Lett. 2006, 97 (18) 187401
10. Thomsen, C.; Reich, S. Double resonant Raman scattering in graphite Phys. Rev. Lett. 2000, 85 (24) 5214-5217 (Pubitemid 32871812)
11. Lucchese, M. M.; Stavale, F.; Ferreira, E. H. M.; Vilani, C.; Moutinho, M. V. O.; Capaz, R. B.; Achete, C. A.; Jorio, A. Quantifying ion-induced defects and Raman relaxation length in graphene Carbon 2010, 48 (5) 1592-1597
12. Li, X. S.; Cai, W. W.; An, J. H.; Kim, S.; Nah, J.; Yang, D. X.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E.; Banerjee, S. K.; Colombo, L.; Ruoff, R. S. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 2009, 324 (5932) 1312-1314
13. Reina, A.; Jia, X. T.; Ho, J.; Nezich, D.; Son, H. B.; Bulovic, V.; Dresselhaus, M. S.; Kong, J. Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition Nano Lett. 2009, 9 (1) 30-35
14. Kalbac, M.; Reina-Cecco, A.; Farhat, H.; Kong, J.; Kavan, L.; Dresselhaus, M. S. The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene ACS Nano 2010, 4 (10) 6055-6063
15. Das, A.; Chakraborty, B.; Piscanec, S.; Pisana, S.; Sood, A. K.; Ferrari, A. C. Phonon renormalization in doped bilayer graphene Phys. Rev. B 2009, 79 (15) 155417
16. Basko, D. M. Calculation of the Raman G peak intensity in monolayer graphene: role of Ward identities New J. Phys. 2009, 11, 095011
17. McCann, E. Asymmetry gap in the electronic band structure of bilayer graphene Phys. Rev. B 2006, 74 (16) 161403
18. Castro, E. V.; Novoselov, K. S.; Morozov, S. V.; Peres, N. M. R.; Dos Santos, J. M. B. L.; Nilsson, J.; Guinea, F.; Geim, A. K.; Neto, A. H. C. Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect Phys. Rev. Lett. 2007, 99 (21) 216802
19. Zhang, Y. B.; Tang, T. T.; Girit, C.; Hao, Z.; Martin, M. C.; Zettl, A.; Crommie, M. F.; Shen, Y. R.; Wang, F. Direct observation of a widely tunable bandgap in bilayer graphene Nature 2009, 459 (7248) 820-823
20. Oostinga, J. B.; Heersche, H. B.; Liu, X. L.; Morpurgo, A. F.; Vandersypen, L. M. K. Gate-induced insulating state in bilayer graphene devices Nat. Mater. 2008, 7 (2) 151-157 (Pubitemid 351161346)
21. 2 Nano Lett. 2007, 7 (6) 1643-1648 (Pubitemid 47140438)
22. Zhang, Y. B.; Brar, V. W.; Girit, C.; Zettl, A.; Crommie, M. F. Origin of spatial charge inhomogeneity in graphene Nat. Phys. 2009, 5 (10) 722-726
23. 2 substrates Phys. Rev. B 2009, 79 (11) 115402
24. 2-Supported Graphene Devices Nano Lett. 2011, 11 (2) 767-771
25. Frank, O.; Tsoukleri, G.; Parthenios, J.; Papagelis, K.; Riaz, I.; Jalil, R.; Novoselov, K. S.; Galiotis, C. Compression Behavior of Single-Layer Graphenes ACS Nano 2010, 4 (6) 3131-3138
26. Gao, L. B.; Ren, W. C.; Liu, B. L.; Saito, R.; Wu, Z. S.; Li, S. S.; Jiang, C. B.; Li, F.; Cheng, H. M. Surface and Interference Coenhanced Raman Scattering of Graphene ACS Nano 2009, 3 (4) 933-939
27. Ling, X.; Zhang, J. First-Layer Effect in Graphene-Enhanced Raman Scattering Small 2010, 6 (18) 2020-2025
28. Ling, X.; Xie, L. M.; Fang, Y.; Xu, H.; Zhang, H. L.; Kong, J.; Dresselhaus, M. S.; Zhang, J.; Liu, Z. F. Can Graphene be used as a Substrate for Raman Enhancement? Nano Lett. 2010, 10 (2) 553-561
29. Jung, N.; Crowther, A. C.; Kim, N.; Kim, P.; Brus, L. Raman Enhancement on Graphene: Adsorbed and Intercalated Molecular Species ACS Nano 2010, 4 (11) 7005-7013
30. Ling, X.; Zhang, J. Interference Phenomenon in Graphene-Enhanced Raman Scattering J. Phys. Chem. C 2011, 115 (6) 2835-2840
31. Li, G. H.; Luican, A.; Dos Santos, J. M. B. L.; Neto, A. H. C.; Reina, A.; Kong, J.; Andrei, E. Y. Observation of Van Hove singularities in twisted graphene layers Nat. Phys. 2010, 6 (2) 109-113
32. Profumo, R. E. V.; Polini, M.; Asgari, R.; Fazio, R.; MacDonald, A. H. Electron-electron interactions in decoupled graphene layers Phys. Rev. B 2010, 82 (8) 085443
33. Haran, G. Single-Molecule Raman Spectroscopy: A Probe of Surface Dynamics and Plasmonic Fields Acc. Chem. Res. 2010, 43 (8) 1135-1143
34. Kalbac, M; Green, A. A.; Hersam, M. C.; Kavan, L. Tuning of Sorted Double-walled Carbon Nanotubes by Electrochemical Charging ACS Nano 2010, 4, 459-469
35. Piscanec, S.; Lazzeri, M.; Robertson, J.; Ferrari, A. C.; Mauri, F. Optical phonons in carbon nanotubes: Kohn anomalies, Peierls distortions, and dynamic effects Phys. Rev. B 2007, 75 (3) 035427
36. Lazzeri, M.; Mauri, F. Nonadiabatic Kohn anomaly in a doped graphene monolayer Phys. Rev. Lett. 2006, 97 (26) 266407
37. Morell, E. S.; Correa, J. D.; Vargas, P.; Pacheco, M.; Barticevic, Z. Flat bands in slightly twisted bilayer graphene: Tight-binding calculations Phys. Rev. B 2010, 82 (12) 121407
38. Gruneis, A.; Attaccalite, C.; Rubio, A.; Vyalikh, D. V.; Molodtsov, S. L.; Fink, J.; Follath, R.; Eberhardt, W.; Buchner, B.; Pichler, T. Electronic structure and electron-phonon coupling of doped graphene layers in KC8 Phys. Rev. B 2009, 79 (20) 205106