-
1
-
-
33750459007
-
Raman Spectrum of Graphene and Graphene Layers
-
Ferrari, A. C.; Meyer, J. C.; Scardaci, V.; Casiraghi, C.; Lazzeri, M.; Mauri, F.; Piscanec, S.; Jiang, D.; Novoselov, K. S.; Roth, S.; Geim, A. K. Raman Spectrum of Graphene and Graphene Layers Phys. Rev. Lett. 2006, 97, 187401
-
(2006)
Phys. Rev. Lett.
, vol.97
, pp. 187401
-
-
Ferrari, A.C.1
Meyer, J.C.2
Scardaci, V.3
Casiraghi, C.4
Lazzeri, M.5
Mauri, F.6
Piscanec, S.7
Jiang, D.8
Novoselov, K.S.9
Roth, S.10
Geim, A.K.11
-
2
-
-
41849142983
-
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
-
DOI 10.1038/nnano.2008.67, PII NNANO200867
-
Das, A.; Pisana, S.; Chakraborty, B.; Piscanec, S.; Saha, S. K.; Waghmare, U. V.; Novoselov, K. S.; Krishnamurthy, H. R.; Geim, A. K.; Ferrari, A. C.; Sood, A. K. Monitoring Dopants by Raman Scattering in an Electrochemically Top-Gated Graphene Transistor Nat. Nanotechnol. 2008, 3, 210-215 (Pubitemid 351499403)
-
(2008)
Nature Nanotechnology
, vol.3
, Issue.4
, pp. 210-215
-
-
Das, A.1
Pisana, S.2
Chakraborty, B.3
Piscanec, S.4
Saha, S.K.5
Waghmare, U.V.6
Novoselov, K.S.7
Krishnamurthy, H.R.8
Geim, A.K.9
Ferrari, A.C.10
Sood, A.K.11
-
3
-
-
78049342778
-
The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
-
Kalbac, M.; Reina-Cecco, A.; Farhat, H.; Kong, J.; Kavan, L.; Dresselhaus, M. S. The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene ACS Nano 2010, 4, 6055-6063
-
(2010)
ACS Nano
, vol.4
, pp. 6055-6063
-
-
Kalbac, M.1
Reina-Cecco, A.2
Farhat, H.3
Kong, J.4
Kavan, L.5
Dresselhaus, M.S.6
-
4
-
-
77955875715
-
Compression Behavior of Single-Layer Graphenes
-
Frank, O.; Tsoukleri, G.; Parthenios, J.; Papagelis, K.; Riaz, I.; Jalil, R.; Novoselov, K. S.; Galiotis, C. Compression Behavior of Single-Layer Graphenes ACS Nano 2010, 4, 3131-3138
-
(2010)
ACS Nano
, vol.4
, pp. 3131-3138
-
-
Frank, O.1
Tsoukleri, G.2
Parthenios, J.3
Papagelis, K.4
Riaz, I.5
Jalil, R.6
Novoselov, K.S.7
Galiotis, C.8
-
5
-
-
75749123538
-
Quantifying Ion-Induced Defects and Raman Relaxation Length in Graphene
-
Lucchese, M. M.; Stavale, F.; Ferreira, E. H. M.; Vilani, C.; Moutinho, M. V. O.; Capaz, R. B.; Achete, C. A.; Jorio, A. Quantifying Ion-Induced Defects and Raman Relaxation Length in Graphene Carbon 2010, 48, 1592-1597
-
(2010)
Carbon
, vol.48
, pp. 1592-1597
-
-
Lucchese, M.M.1
Stavale, F.2
Ferreira, E.H.M.3
Vilani, C.4
Moutinho, M.V.O.5
Capaz, R.B.6
Achete, C.A.7
Jorio, A.8
-
6
-
-
66749119012
-
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
-
Li, X. S.; Cai, W. W.; An, J. H.; Kim, S.; Nah, J.; Yang, D. X.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E.; Banerjee, S. K.; Colombo, L.; Ruoff, R. S. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 2009, 324, 1312-1314
-
(2009)
Science
, vol.324
, pp. 1312-1314
-
-
Li, X.S.1
Cai, W.W.2
An, J.H.3
Kim, S.4
Nah, J.5
Yang, D.X.6
Piner, R.7
Velamakanni, A.8
Jung, I.9
Tutuc, E.10
Banerjee, S.K.11
Colombo, L.12
Ruoff, R.S.13
-
7
-
-
60749107706
-
Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition
-
Reina, A.; Jia, X. T.; Ho, J.; Nezich, D.; Son, H. B.; Bulovic, V.; Dresselhaus, M. S.; Kong, J. Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition Nano Lett. 2009, 9, 30-35
-
(2009)
Nano Lett.
, vol.9
, pp. 30-35
-
-
Reina, A.1
Jia, X.T.2
Ho, J.3
Nezich, D.4
Son, H.B.5
Bulovic, V.6
Dresselhaus, M.S.7
Kong, J.8
-
8
-
-
79955878629
-
13C Graphene
-
13C Graphene Nano Lett. 2011, 11, 1957-1963
-
(2011)
Nano Lett.
, vol.11
, pp. 1957-1963
-
-
Kalbac, M.1
Farhat, H.2
Kong, J.3
Janda, P.4
Kavan, L.5
Dresselhaus, M.S.6
-
9
-
-
27744534165
-
Two-dimensional gas of massless Dirac fermions in graphene
-
DOI 10.1038/nature04233, PII N04233
-
Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-Dimensional Gas of Massless Dirac Fermions in Graphene Nature 2005, 438, 197-200 (Pubitemid 41599867)
-
(2005)
Nature
, vol.438
, Issue.7065
, pp. 197-200
-
-
Novoselov, K.S.1
Geim, A.K.2
Morozov, S.V.3
Jiang, D.4
Katsnelson, M.I.5
Grigorieva, I.V.6
Dubonos, S.V.7
Firsov, A.A.8
-
10
-
-
85181509459
-
Growth of Large-Area Single- and Bi-layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces
-
Reina, A.; Thiele, S.; Jia, X.; Bhaviripudi, S.; Dresselhaus, M. S.; Schaefer, J. A.; Kong, J. Growth of Large-Area Single- and Bi-layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces Nano Res. 2009, 2, 509-516
-
(2009)
Nano Res.
, vol.2
, pp. 509-516
-
-
Reina, A.1
Thiele, S.2
Jia, X.3
Bhaviripudi, S.4
Dresselhaus, M.S.5
Schaefer, J.A.6
Kong, J.7
-
11
-
-
79951543493
-
Interference Phenomenon in Graphene-Enhanced Raman Scattering
-
Ling, X.; Zhang, J. Interference Phenomenon in Graphene-Enhanced Raman Scattering J. Phys. Chem. C 2011, 115, 2835-2840
-
(2011)
J. Phys. Chem. C
, vol.115
, pp. 2835-2840
-
-
Ling, X.1
Zhang, J.2
-
14
-
-
77957908617
-
Boron Nitride Substrates for High-Quality Graphene Electronics
-
Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L.; Hone, J. Boron Nitride Substrates for High-Quality Graphene Electronics Nat. Nanotech. 2010, 5, 722-726
-
(2010)
Nat. Nanotech.
, vol.5
, pp. 722-726
-
-
Dean, C.R.1
Young, A.F.2
Meric, I.3
Lee, C.4
Wang, L.5
Sorgenfrei, S.6
Watanabe, K.7
Taniguchi, T.8
Kim, P.9
Shepard, K.L.10
Hone, J.11
-
15
-
-
78650122340
-
2 Substrate
-
2 Substrate Nano Lett. 2010, 10, 4944-4951
-
(2010)
Nano Lett.
, vol.10
, pp. 4944-4951
-
-
Ryu, S.1
Liu, L.2
Berciaud, S.3
Yu, Y.J.4
Liu, H.T.5
Kim, P.6
Flynn, G.W.7
Brus, L.E.8
-
16
-
-
67049114012
-
Surface and Interference Coenhanced Raman Scattering of Graphene
-
Gao, L. B.; Ren, W. C.; Liu, B. L.; Saito, R.; Wu, Z. S.; Li, S. S.; Jiang, C. B.; Li, F.; Cheng, H. M. Surface and Interference Coenhanced Raman Scattering of Graphene ACS Nano 2009, 3, 933-939
-
(2009)
ACS Nano
, vol.3
, pp. 933-939
-
-
Gao, L.B.1
Ren, W.C.2
Liu, B.L.3
Saito, R.4
Wu, Z.S.5
Li, S.S.6
Jiang, C.B.7
Li, F.8
Cheng, H.M.9
-
17
-
-
38849191936
-
Interference Enhancement of Raman Signal of Graphene
-
Wang, Y. Y.; Ni, Z. H.; Shen, Z. X.; Wang, H. M.; Wu, Y. H. Interference Enhancement of Raman Signal of Graphene Appl. Phys. Lett. 2008, 92, 043121
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 043121
-
-
Wang, Y.Y.1
Ni, Z.H.2
Shen, Z.X.3
Wang, H.M.4
Wu, Y.H.5
-
18
-
-
77956932526
-
First-Layer Effect in Graphene-Enhanced Raman Scattering
-
Ling, X.; Zhang, J. First-Layer Effect in Graphene-Enhanced Raman Scattering Small 2010, 6, 2020-2025
-
(2010)
Small
, vol.6
, pp. 2020-2025
-
-
Ling, X.1
Zhang, J.2
-
19
-
-
76749151032
-
Can Graphene Be Used as a Substrate for Raman Enhancement?
-
Ling, X.; Xie, L. M.; Fang, Y.; Xu, H.; Zhang, H. L.; Kong, J.; Dresselhaus, M. S.; Zhang, J.; Liu, Z. F. Can Graphene Be Used as a Substrate for Raman Enhancement? Nano Lett. 2010, 10, 553-561
-
(2010)
Nano Lett.
, vol.10
, pp. 553-561
-
-
Ling, X.1
Xie, L.M.2
Fang, Y.3
Xu, H.4
Zhang, H.L.5
Kong, J.6
Dresselhaus, M.S.7
Zhang, J.8
Liu, Z.F.9
-
20
-
-
77957729548
-
Flat Bands in Slightly Twisted Bilayer Graphene: Tight-Binding Calculations
-
Morell, E. S.; Correa, J. D.; Vargas, P.; Pacheco, M.; Barticevic, Z. Flat Bands in Slightly Twisted Bilayer Graphene: Tight-Binding Calculations Phys. Rev. B 2010, 82, 121407
-
(2010)
Phys. Rev. B
, vol.82
, pp. 121407
-
-
Morell, E.S.1
Correa, J.D.2
Vargas, P.3
Pacheco, M.4
Barticevic, Z.5
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