Elastic properties of GaN Nanowires: Revealing the influence of planar defects on young's modulus at nanoscale

Nano Letters

Volumn 15, Issue 1, 2015, Pages 8-15

  Dai, Sheng ^a   Zhao, Jiong ^a   He, Mo Rigen ^a   Wang, Xiaoguang ^b   Wan, Jingchun ^b   Shan, Zhiwei ^b   Zhu, Jing ^a  

^a TSINGHUA UNIVERSITY   (China)

^b XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

elastic behavior; GaN nanowires; in situ electron microscopy; planar defects; Young's modulus

Indexed keywords

DEFECTS; ELASTICITY; ELECTRIC FIELDS; ELECTRON MICROSCOPY; GALLIUM NITRIDE; IN SITU PROCESSING; NANOWIRES; TENSILE TESTING; TRANSMISSION ELECTRON MICROSCOPY;

ELASTIC BEHAVIOR; GAN NANOWIRES; IN-SITU ELECTRON MICROSCOPY; PLANAR DEFECT; YOUNG'S MODULUS;

ELASTIC MODULI;

GALLIUM; GALLIUM NITRIDE; NANOWIRE;

CHEMISTRY; YOUNG MODULUS;

ELASTIC MODULUS; GALLIUM; NANOWIRES;

EID: 84921023510     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl501986d     Document Type: Article

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