The effect of atomic vacancies and grain boundaries on mechanical properties of GaN nanowires

Chinese Physics Letters

Volumn 28, Issue 6, 2011, Pages

  Xie, Shi Feng ^a   Chen, Shang Da ^a   Soh, Ai Kah ^b  

^a XIANGTAN UNIVERSITY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTIC MODULI; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOLECULAR DYNAMICS; NANOWIRES; SURFACE DEFECTS; ZINC SULFIDE;

ATOMIC VACANCIES; AXIAL DIRECTION; CRITICAL STRESS; DOMAIN GRAINS; GAN NANOWIRES; GRAIN-BOUNDARIES; INVERSION DOMAINS; STILLINGER-WEBER POTENTIALS; WURTZITE GAN NANOWIRES; YOUNG MODULUS;

GRAIN BOUNDARIES;

EID: 79959455515     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/6/066201     Document Type: Article

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