Fundamental insights into the threshold characteristics of organic field-effect transistors

Journal of Physics D: Applied Physics

Volumn 48, Issue 3, 2015, Pages

  Jung, Sungyeop ^a   Kim, Chang Hyun ^a   Bonnassieux, Yvan ^a   Horowitz, Gilles ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Numerical simulation; Organic field effect transistors (OFETs); Threshold characteristics

Indexed keywords

CHARGE INJECTION; COMPUTER SIMULATION; ELECTRON INJECTION; ELECTRONIC STRUCTURE; FINITE ELEMENT METHOD; ORGANIC FIELD EFFECT TRANSISTORS; THRESHOLD VOLTAGE;

CHARGE-CARRIER DISTRIBUTION; FLAT-BAND VOLTAGE; HOLE INJECTION BARRIER HEIGHT; SECOND DERIVATIVES; THRESHOLD CHARACTERISTICS; TRANSFER CHARACTERISTICS; TWO DIMENSIONAL FINITE ELEMENT METHOD; TWO DIMENSIONAL NATURE;

FIELD EFFECT TRANSISTORS;

EID: 84920812272     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/48/3/035106     Document Type: Article

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