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Journal of Applied Physics

Volumn 110, Issue 9, 2011, Pages

Modeling the low-voltage regime of organic diodes: Origin of the ideality factor

(4) Hyun Kim, Chang a Yaghmazadeh, Omid a Bonnassieux, Yvan a Horowitz, Gilles a

a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; DEVICE SIMULATIONS; EXPERIMENTAL DATA; EXPONENTIAL DISTRIBUTIONS; IDEALITY FACTORS; LOW-VOLTAGE; OPERATING MECHANISM; ORGANIC DIODES; P-N JUNCTION; PENTACENES; PHYSICALLY-BASED SIMULATION; SCHOTTKY DIODES; SINGLE LAYER; TRAP EFFECT;

COMPUTER SIMULATION; DIODES; MATHEMATICAL MODELS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 81355132328 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3660221 Document Type: Article

Times cited : (70)

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