The effect of electroplating parameters and substrate material on tin whisker formation

Microelectronics Reliability

Volumn 55, Issue 1, 2015, Pages 180-191

  Ashworth, M A ^a   Wilcox, G D ^a   Higginson, R L ^a   Heath, R J ^a   Liu, C ^a   Mortimer, R J ^a  

^a LOUGHBOROUGH UNIVERSITY   (United Kingdom)

Author keywords

Characterisation; Electrodeposition; Intermetallic formation; Tin; Whisker growth

Indexed keywords

COPPER DEPOSITS; CORROSION RESISTANCE; CRYSTAL WHISKERS; DEPOSITION; DEPOSITS; ELECTRODEPOSITION; ELECTRONICS INDUSTRY; ELECTROPLATING; SILVER DEPOSITS; THICKNESS MEASUREMENT; TIN;

CHARACTERISATION; DEPOSITION CURRENT DENSITY; DEPOSITION PARAMETERS; ELECTRICAL CONDUCTIVITY; INTERMETALLIC FORMATION; MITIGATION STRATEGY; SPONTANEOUS GROWTH; WHISKER GROWTH;

TIN DEPOSITS;

EID: 84920522437     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2014.10.005     Document Type: Article

References (49)

1. The European Parliament and The Council of The European Union, Off J Eur Union 2003;46:L37 19.
2. Sandnes E, Williams ME, Vaudin MD, Stafford GR. J Electron Mater 2008;37:490.
3. Baated A, Hamasaki K, Kim SS, Kim K-S, Suganuma K. J Electron Mater 2011;40:2278.
4. Jadhav N, Williams M, Pei F, Stafford G, Chason E. J Electron Mater 2012;42:312.
5. JEDEC/IPC, JP002: Current tin whiskers theory and mitigation practices guideline; 2006.
6. INEMI. iNEMI recommendations on lead-free finishes for components used in high-reliability products version 4 (12-1-06); 2006. p. 1-23.
7. Sobiech M, Welzel U, Mittemeijer EJ, Hugel W, Seekamp A. Appl Phys Lett 2008;93.
8. Dittes M, Oberndorff P, Petit L. In: 53rd Electron Compon Technol Conf 2003 Proc; 2003. p. 822-6.
9. Baated A, Kim K-S, Suganuma K. J Mater Sci: Mater Electron 2011;22:1685.
10. Woodrow TA, Ledbury EA. In: IPC/JEDEC 8th Int Conf Lead-Free Electron Compon Assem, San Jose, CA, April 18-20; 2005. p. 191-215.
11. Han S, Osterman M, Meschter S, Pecht M. J Electron Mater 2012;41:2508.
12. Wickham M, Hunt C. NPL REPORT MAT 28 test method for measurement of the propensity for conformal coatings to inhibit tin whiskering; 2008.
13. Sobiech M, Teufel J, Welzel U, Mittemeijer EJ, Hügel W. J Electron Mater 2011;40:2300.
14. Moon KW, Kim SK, Williams ME, Boettinger WJ, Stafford GR. J Appl Electrochem 2010;40:1671.
15. Yu CF, Chan CM, Hsieh KC. Microelectron Reliab 2010;50:1146.
16. Sauter L, Seekamp A, Shibata Y, Kanameda Y, Yamashita H. Microelectron Reliab 2010;50:1631.
17. Lee BZ, Lee DN. Acta Mater 1998;46:3701.
18. Sharma A, Bhattacharya S, Sen R, Reddy BSB, Fecht H-J, Das K, et al. Mater Charact 2012;68:22.
19. Schetty R. In: 2004 Int Conf Bus Electron Prod Reliab Liability. Proc; 2004. p. 29-34.
20. Whitlaw K, Crosby J, Toben M. Circ World 2006;32:23.
21. Zhang W, Guebey J, Toben M. Met Finish 2011;109:13.
22. Schetty R. In: IPC/JEDEC Int Conf Lead-Free Electron, Shanghai, China November 16-17, 2004; 2004.
23. Zhang W, Schwager F. J Electrochem Soc 2006;153:C337.
24. Wang J, Ashworth MA, Wilcox GD. IEEE Trans Compon Packag Manuf Technol 2014;4:727.
25. Osenbach JW. U.S. Patent No. WO2010002377A1; 2010.
26. Zhang W, Egli A, Schwager F, Brown N. IEEE Trans Electron Packag Manuf 2005;28:85.
27. Chason E, Jadhav N, Pei F, Buchovecky E, Bower A. Prog Surf Sci 2013;88:103.
28. Kim KS, Yu CH, Han SW, Yang KC, Kim JH. Microelectron Reliab 2008;48:111.
29. Garich H, McCrabb H, Taylor E, Inman M. ECS Trans 2007;6:153.
30. Britton SC, Clarke M. Trans Inst Met Finish 1964;40:205.
31. Fujiwara K, Kawanaka R. J Appl Phys 1980;51:6231.
32. Sakuyama S, Kutami M. FUJITSU Sci Technol J 2005;41:217.
33. Ashworth MA, Wilcox GD, Higginson RL, Heath RJ, Liu C. J Electron Mater 2014;43:1005.
34. Dunn BD. Eur. Sp. Agency Rep. STR-223. Paris (France): Eur. Sp. Agency; 1987.
35. Crandall ER. Factors governing tin whisker growth. PhD thesis, Auburn University; 2012.
36. JEDEC, JESD22-A121A: Test method for measuring whisker growth on tin and tin alloy surface finishes; 2008.
37. Shibutani T, Osterman M, Pecht M. Ieee Trans Compon Packag Technol 2009;32:216.
38. Yu CH, Kang HS, Kim KS, Han SW, Yang KC. In: 2007 12th Symp Adv Packag Mater Process Prop Interf 2007:65-71.
39. Yeh M-C, Li JL, Lo PJ, Yu R, Yu C-F, Hsieh K-C. J Mater Sci: Mater Electron 2013;25:317.
40. Osenbach JW, DeLucca JM, Potteiger BD, Amin A, Baiocchi FA. J. Mater. Sci. Electron. 2007;18:283.
41. Pinsky DA. Microelectron Reliab 2008;48:675.
42. Jiang B, Xian AP. Microelectron Reliab 2008;48:105.
43. Cheng J, Yang F, Vianco PT, Zhang B, Li JCM. J Electron Mater 2011;40:2069.
44. Whitlaw K, Egli A, Toben M. Circ World 2004;30:20.
45. Kao HJ, Wu WC, Tsai ST, Liu CY. J Electron Mater 2006;35:1885.
46. Tu KN. Acta Metall 1973;21:347.
47. Chang J, Kang SK, Lee J-H, Kim K-S, Lee HM. J Electron Mater 2013;43:259.
48. Dittes M, Oberndorff P, Crema P, Su P. AIP Conf Proc 2006;817:348.
49. Kato T, Akahoshi H, Nakamura M, Terasaki T, Iwasaki T, Hashimoto T, et al. IEEE Trans Electron Packag Manuf 2010;33:165.