Optically transparent thin-film transistors based on 2D multilayer MoS2 and indium zinc oxide electrodes

Nanotechnology

Volumn 26, Issue 3, 2015, Pages

  Kwon, Junyeon ^a   Ki Hong, Young ^a   Kwon, Hyuk Jun ^b   Jin Park, Yu ^c   Yoo, Byungwook ^c   Kim, Jiwan ^c   Grigoropoulos, Costas P ^b   Suk Oh, Min ^c   Kim, Sunkook ^a  

^a Kyung Hee University   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Korea Electronic Technology Institute (KETI)   (South Korea)

Author keywords

laser annealing; MoS2; TFT; transition metal dichalcogenides; transparent electronics

Indexed keywords

ANNEALING; ELECTRODES; FILM PREPARATION; INDIUM; MOLYBDENUM COMPOUNDS; MOLYBDENUM OXIDE; PULSED LASERS; SCHOTTKY BARRIER DIODES; THIN FILM CIRCUITS; THIN FILMS; TIN OXIDES; TRANSITION METALS; ULTRAFAST LASERS; ZINC; ZINC OXIDE;

FIELD-EFFECT MOBILITIES; LASER ANNEALING; MOLYBDENUM DISULFIDE; SOURCE/DRAIN ELECTRODES; TRANSITION METAL DICHALCOGENIDES; TRANSPARENT ELECTRONICS; TRANSPARENT THIN FILM TRANSISTOR; VISIBLE WAVELENGTHS;

THIN FILM TRANSISTORS;

EID: 84920123692     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/26/3/035202     Document Type: Article

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