Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes

Advanced Materials

Volumn 21, Issue 5, 2009, Pages 564-568

  Kim, Sunkook ^a   Ju, Sanghyun ^b   Back, Ju Hee ^c   Xuan, Yi ^a   Ye, Peide D ^a   Shim, Moonsub ^c   Janes, David B ^a   Mohammad, Saeed ^a  

^a PURDUE UNIVERSITY   (United States)

^b Kyonggi University   (South Korea)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTRON TUBES; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INDIUM; NANOCOMPOSITES; NANOTUBES; OXIDE MINERALS; PHOTOLITHOGRAPHY; QUARTZ; SINGLE-WALLED CARBON NANOTUBES (SWCN); THIN FILM DEVICES; THIN FILM TRANSISTORS; TIN; TITANIUM COMPOUNDS; TRANSISTORS;

ACTIVE CHANNEL LAYERS; ACTIVE CHANNELS; ACTIVE MATRIX ARRAYS; ALIGNED ARRAYS; ALIGNED CARBON NANOTUBES; APERTURE RATIOS; ELECTRONIC CIRCUITS; GATE ELECTRODES; INDIUM TIN OXIDE ELECTRODES; ITO CONTACTS; NEW OPPORTUNITIES; QUARTZ SUBSTRATES; SINGLE-WALLED CARBONS; SOURCE/DRAIN ELECTRODES; SPECIFIC AREAS; THIN-FILM; TRANSISTOR CHARACTERISTICS; TRANSPARENT THIN-FILM TRANSISTORS;

CARBON NANOTUBES;

EID: 60349129885     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200801032     Document Type: Article

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