Selective and localized laser annealing effect for high-performance flexible multilayer MoS2 thin-film transistors

Nano Research

Volumn 7, Issue 8, 2014, Pages 1137-1145

  Kwon, Hyukjun ^a   Choi, Woong ^b   Lee, Daeho ^a,c   Lee, Yunsung ^d   Kwon, Junyeon ^d   Yoo, Byungwook ^e   Grigoropoulos, Costas P ^a   Kim, Sunkook ^d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Kookmin University   (South Korea)

^c Gachon University   (South Korea)

^d Kyung Hee University   (South Korea)

^e Korea Electronic Technology Institute (KETI)   (South Korea)

Author keywords

dichalcogenides; flexible electronics; laser annealing; MoS2; thin film transistors; transition metal

Indexed keywords

EID: 84910148381     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-014-0476-1     Document Type: Article

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