Epitaxial (001) BiFeO3 thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

Journal of Materials Chemistry C

Volumn 3, Issue 3, 2015, Pages 582-595

  Zhang, Qi ^a   Valanoor, Nagarajan ^a   Standard, Owen ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; BISMUTH COMPOUNDS; CHEMICALS; COERCIVE FORCE; FERRITE; FERROELECTRIC FILMS; FERROELECTRICITY; GELATION; HYSTERESIS; HYSTERESIS LOOPS; LANTHANUM COMPOUNDS; MANGANESE OXIDE; POLARIZATION; PRECIPITATION (CHEMICAL); SUBSTRATES; THIN FILMS;

CHEMICAL SOLUTION DEPOSITION; FERROELECTRIC PROPERTY; FREQUENCY-DEPENDENT; LANTHANUM STRONTIUM MANGANITE; POLARIZATION DIRECTION; RESISTIVE SWITCHING BEHAVIORS; SQUARE HYSTERESIS LOOP; SWITCHING MECHANISM;

DEPOSITION;

EID: 84919667311     PISSN: 20507534     EISSN: 20507526     Source Type: Journal    
DOI: 10.1039/c4tc02371d     Document Type: Article

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